Characterization of the Excess Carrier Lifetime of As-Grown and Electron Irradiated Epitaxial p-Type 4H-SiC Layers by the Microwave Photoconductivity Decay Method

Yoshinori Matsushita; Masashi Kato; Masaya Ichimura; Tomoaki Hatayama; Takeshi Ohshima

doi:10.4028/www.scientific.net/MSF.645-648.207

Paper Titles

SiC Nanowires Grown on 4H-SiC Substrates by Chemical Vapor Deposition
p.187

Identification of Defects Limiting the Carrier Lifetime in n^- Epitaxial Layers of 4H-SiC
p.193

Temperature and Injection Level Dependencies of Carrier Lifetimes in p-Type and n-Type 4H-SiC Epilayers
p.199

Temperature Dependence of the Carrier Lifetime in 4H-SiC Epilayers
p.203

Characterization of the Excess Carrier Lifetime of As-Grown and Electron Irradiated Epitaxial p-Type 4H-SiC Layers by the Microwave Photoconductivity Decay Method
p.207

CL/EBIC-SEM Techniques for Evaluation of Impact of Crystallographic Defects on Carrier Lifetime in 4H-SiC Epitaxial Layers
p.211

Nonequilibrium Carrier Recombination in Highly Excited Bulk SiC Crystals
p.215

On the Correlation of the Structural Perfection and Nonequilibrium Carrier Parameters in 3C SiC Heterostructures
p.219

Increase of SiC Substrate Resistance Induced by Annealing
p.223

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Characterization of the Excess Carrier Lifetime of...

Characterization of the Excess Carrier Lifetime of As-Grown and Electron Irradiated Epitaxial p-Type 4H-SiC Layers by the Microwave Photoconductivity Decay Method

Abstract:

We measured the excess carrier lifetimes in as-grown and electron irradiated p-type 4H-SiC epitaxial layers with the microwave photoconductivity decay (-PCD) method. The carrier lifetime becomes longer with excitation density for the as-grown epilayer. This dependence suggests that e ≥h for the dominant recombination center, where e andh are capture cross sections for electrons and holes, respectively. In contrast, the carrier lifetime does not depend on the excitation density for the sample irradiated with electrons at an energy of 160 keV and a dose of 1×1017 cm-2. This may be due to the fact that recombination centers with e <<h were introduced by the electron irradiation or due to the fact that the acceptor concentration was decreased significantly by the irradiation.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2009

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Pages:

207-210

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.207

Citation:

Cite this paper

Online since:

April 2010

Authors:

Yoshinori Matsushita, Masashi Kato, Masaya Ichimura, Tomoaki Hatayama, Takeshi Ohshima

Keywords:

Carrier Lifetime, Electron Irradiation, Photoconductivity Decay

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] K. Danno, D. Nakamura and T. Kimoto: Appl. Phys. Lett. Vol. 90 (2007), p.202109.

Google Scholar

[2] P. B. Klein: J. Appl. Phys. Vol. 103 (2008), p.033702.

Google Scholar

[3] K. Danno and T. Kimoto: J. Appl. Phys. Vol. 100 (2006), p.113728.

Google Scholar

[4] M. Kato, M. Kawai, T. Mori, M. Ichimura, S. Sumie and H. Hashizume: Jpn. J. Appl. Phys. Vol. 46 (2007), p.5057.

Google Scholar

[5] S. G. Sridhara, T. J. Eperjesi, R. P. Dvaty and W. J. Choyke: Mater. Sci. Eng. B, Vol. 61-62 (1999), pp.229-233.

Google Scholar

[6] Richard K. Ahrenkiel and Mark S. Lundstrom, in: Minority Carriers in III-V Semiconductors: Physics and Applications, edited by R. K. Willardson, Albert C. Beer, and Eicke R. Weber, volume 39 of SEMICONDUCTORS AND SEMIMETALS, chapter, 2, Harcourt Brace & Company, Publishers (1993).

DOI: 10.1016/s0080-8784(08)62591-0

Google Scholar

[7] H. Matsuura, N. Minohata and T. Ohshima: J. Appl. Phys. Vol. 104 (2008), p.043702.

Google Scholar

[8] K. Danno and T. Kimoto: J. Appl. Phys. Vol. 101 (2007), p.103704.

Google Scholar

[9] K. Neimontas, T. Malinauskas, R. Aleksiejūnas, M. Sūdžius, K. Jarašiūnas, L. Storasta, J. P. Bergman and E. Janzen: Semicond. Sci. Technol. Vol. 21 (2006), pp.952-958.

DOI: 10.1088/0268-1242/21/7/021

Google Scholar