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HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Identification of Defects Limiting the Carrier...

Identification of Defects Limiting the Carrier Lifetime in n^- Epitaxial Layers of 4H-SiC

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Abstract:

The identification of defects limiting the carrier lifetime in n- epilayers of 4H-SiC is reviewed. The dominant electron traps, the Z1/2 and EH6/7 defects, believed to be VC-related, have been correlated to the lifetime in several studies. It was later shown that only one center, Z1/2 , actually controls the bulk lifetime. In recently-grown material with low Z1/2 concentration, other processes dominate. Recent measurements indicate that surface recombination controls the lifetime.

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Materials Science Forum (Volumes 645-648)

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193-198

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https://doi.org/10.4028/www.scientific.net/MSF.645-648.193

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April 2010

Authors:

Paul B. Klein

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Carrier Lifetime, Epitaxial Growth

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