Identification of Defects Limiting the Carrier Lifetime in n- Epitaxial Layers of 4H-SiC

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The identification of defects limiting the carrier lifetime in n- epilayers of 4H-SiC is reviewed. The dominant electron traps, the Z1/2 and EH6/7 defects, believed to be VC-related, have been correlated to the lifetime in several studies. It was later shown that only one center, Z1/2 , actually controls the bulk lifetime. In recently-grown material with low Z1/2 concentration, other processes dominate. Recent measurements indicate that surface recombination controls the lifetime.

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Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

193-198

DOI:

10.4028/www.scientific.net/MSF.645-648.193

Citation:

P. B. Klein "Identification of Defects Limiting the Carrier Lifetime in n- Epitaxial Layers of 4H-SiC ", Materials Science Forum, Vols. 645-648, pp. 193-198, 2010

Online since:

April 2010

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$35.00

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