Identification of Defects Limiting the Carrier Lifetime in n- Epitaxial Layers of 4H-SiC
The identification of defects limiting the carrier lifetime in n- epilayers of 4H-SiC is reviewed. The dominant electron traps, the Z1/2 and EH6/7 defects, believed to be VC-related, have been correlated to the lifetime in several studies. It was later shown that only one center, Z1/2 , actually controls the bulk lifetime. In recently-grown material with low Z1/2 concentration, other processes dominate. Recent measurements indicate that surface recombination controls the lifetime.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
P. B. Klein "Identification of Defects Limiting the Carrier Lifetime in n- Epitaxial Layers of 4H-SiC ", Materials Science Forum, Vols. 645-648, pp. 193-198, 2010