Investigation of Low Doped n-Type and p-Type 3C-SiC Layers Grown on 6H-SiC Substrates by Sublimation Epitaxy

Georgios Zoulis; Jian Wu Sun; Milena Beshkova; Remigijus Vasiliauskas; Sandrine Juillaguet; Hervé Peyre; Mikael Syväjärvi; Rositza Yakimova; Jean Camassel

doi:10.4028/www.scientific.net/MSF.645-648.179

Paper Titles

Further Evidence of Nitrogen Induced Stabilization of 3C-SiC Polytype during Growth from a Si-Ge Liquid Phase
p.163

Bow in 6 Inch High-Quality Off-Axis (111) 3C-SiC Films
p.167

Low Doped 3C-SiC Layers Deposited by the Vapour-Liquid-Solid Mechanism on 6H-SiC Substrates
p.171

Sublimation Growth and Structural Characterization of 3C-SiC on Hexagonal and Cubic SiC Seeds
p.175

Investigation of Low Doped n-Type and p-Type 3C-SiC Layers Grown on 6H-SiC Substrates by Sublimation Epitaxy
p.179

Properties of 3C-SiC Grown by Sublimation Epitaxy on Different Type of Substrates
p.183

SiC Nanowires Grown on 4H-SiC Substrates by Chemical Vapor Deposition
p.187

Identification of Defects Limiting the Carrier Lifetime in n^- Epitaxial Layers of 4H-SiC
p.193

Temperature and Injection Level Dependencies of Carrier Lifetimes in p-Type and n-Type 4H-SiC Epilayers
p.199

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Investigation of Low Doped n-Type and p-Type...

Investigation of Low Doped n-Type and p-Type 3C-SiC Layers Grown on 6H-SiC Substrates by Sublimation Epitaxy

Abstract:

Both, n-type and p-type 3C-SiC samples grown on 6H-SiC substrates by sublimation epitaxy have been investigated. From low temperature photoluminescence studies, we demonstrate a low level of residual (n and/or p-type) doping with weak compensation, which is confirmed by secondary ion mass spectroscopy in the case of p-type samples.