Low Doped 3C-SiC Layers Deposited by the Vapour-Liquid-Solid Mechanism on 6H-SiC Substrates

Jean Lorenzzi; Georgios Zoulis; Olivier Kim-Hak; Nikoletta Jegenyes; Davy Carole; François Cauwet; Sandrine Juillaguet; Gabriel Ferro; Jean Camassel

doi:10.4028/www.scientific.net/MSF.645-648.171

Paper Titles

Thermally Induced Surface Reorganization of 3C-SiC(111) Epilayers Grown on Silicon Substrates
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Tuning Residual Stress in 3C-SiC(100) on Si(100)
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Further Evidence of Nitrogen Induced Stabilization of 3C-SiC Polytype during Growth from a Si-Ge Liquid Phase
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Bow in 6 Inch High-Quality Off-Axis (111) 3C-SiC Films
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Low Doped 3C-SiC Layers Deposited by the Vapour-Liquid-Solid Mechanism on 6H-SiC Substrates
p.171

Sublimation Growth and Structural Characterization of 3C-SiC on Hexagonal and Cubic SiC Seeds
p.175

Investigation of Low Doped n-Type and p-Type 3C-SiC Layers Grown on 6H-SiC Substrates by Sublimation Epitaxy
p.179

Properties of 3C-SiC Grown by Sublimation Epitaxy on Different Type of Substrates
p.183

SiC Nanowires Grown on 4H-SiC Substrates by Chemical Vapor Deposition
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HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Low Doped 3C-SiC Layers Deposited by the...

Low Doped 3C-SiC Layers Deposited by the Vapour-Liquid-Solid Mechanism on 6H-SiC Substrates

Abstract:

We report the results of a systematic investigation performed to reduce the residual n-type doping level of the 3C-SiC layers grown by the VLS mechanism on 6H-SiC(0001) on-axis substrate. This new approach, termed “High purity VLS” leads to low doped and low compensated material, which was confirmed by Raman and Low Temperature Photoluminescence spectroscopy. The resultant 3C morphology remains typical of single-domain layers and the n-type doping level could be estimated around 6x1016 cm-3.

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Materials Science Forum (Volumes 645-648)

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171-174

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.171

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Online since:

April 2010

Authors:

Jean Lorenzzi, Georgios Zoulis, Olivier Kim-Hak, Nikoletta Jegenyes, Davy Carole, François Cauwet, Sandrine Juillaguet, Gabriel Ferro, Jean Camassel

Keywords:

Heteroepitaxy, High Purity Semi-Insulating (HPSI), Vapor-Liquid-Solid Growth

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References

[1] F. Ciobanu, G. Pensl, H. Nagasawa, A. Schöner, S. Dimitrijev, K. Y. Cheong, V. V. Afanas'ev and G. Wagner, Mater. Sci. Forum, Vol. 353 - 356 (2001), p.669.

Google Scholar

[2] H. Lendenman, F. Dahlquist, N. Johanson, R. Sölderholm, P. A. Nilsson, J. P. Bergmann and P. Skytt. Mater. Sci. Forum, Vol. 433 (2003), p.551.

Google Scholar

[3] M. Soueidan, G. Ferro, B. Nsouli, M. Roumie, E. Polychroniadis, M. Kazan, S. Juillaguet, D. Chaussende, N. Habka, J. Stoemenos, J. Camassel, Y. Monteil, Cryst. Growth Des. Vol. 6 (2006), pp.2598-2602.

DOI: 10.1021/cg0603523

Google Scholar

[4] N. Habka, V. Soulière, J. M. Bluet, M. Soueidan, G. Ferro and Y. Monteil, Mat. Sci. Forum Vol. 556-557 (2007), p.403.

DOI: 10.4028/www.scientific.net/msf.556-557.403

Google Scholar

[5] J. Camassel, S. Juillaguet, M. Zielinski, C. Balloud, Chem. Vapor Depos. Vol. 12 (2006), pp.549-556.

DOI: 10.1002/cvde.200606472

Google Scholar

[6] S. Nakashima, H. Harima, Phys. Stat. Sol. (a) Vol. 162 (1997), pp.39-2, 4 2, 3 2, 2 2, 1 2, 0 1, 9 1, 8 T~4K λλλλlaser=244nm DAP LO TO LA TA ZPL PL (a. u. ) E (eV) a) b).

Google Scholar