On the Correlation of the Structural Perfection and Nonequilibrium Carrier Parameters in 3C SiC Heterostructures

Arunas Kadys; Patrik Ščajev; Georgios Manolis; Vytautas Gudelis; Kęstutis Jarašiūnas; Pavel L. Abramov; Sergey P. Lebedev; Alexander A. Lebedev

doi:10.4028/www.scientific.net/MSF.645-648.219

Paper Titles

Temperature Dependence of the Carrier Lifetime in 4H-SiC Epilayers
p.203

Characterization of the Excess Carrier Lifetime of As-Grown and Electron Irradiated Epitaxial p-Type 4H-SiC Layers by the Microwave Photoconductivity Decay Method
p.207

CL/EBIC-SEM Techniques for Evaluation of Impact of Crystallographic Defects on Carrier Lifetime in 4H-SiC Epitaxial Layers
p.211

Nonequilibrium Carrier Recombination in Highly Excited Bulk SiC Crystals
p.215

On the Correlation of the Structural Perfection and Nonequilibrium Carrier Parameters in 3C SiC Heterostructures
p.219

Increase of SiC Substrate Resistance Induced by Annealing
p.223

Barrier Inhomogeneities of Mo Schottky Barrier Diodes on 4H-SiC
p.227

Fundamental Band Edge Absorption in 3C-SiC: Phonon Absorption Assisted Transitions
p.231

Electronic Structure and Momentum-Dependent Resonant Inelastic X-Ray Scattering in Broad Band Materials
p.235

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On the Correlation of the Structural Perfection and Nonequilibrium Carrier Parameters in 3C SiC Heterostructures

Abstract:

Photoelectric properties of 3C sublimation-grown epitaxial layers with different structural quality were studied by using time-resolved picosecond transient grating and free carrier absorption techniques. The layer quality was described by a parameter LTW which gives the total length of twin boundaries in a layer. Optical measurements of diffusion coefficients and carrier lifetimes in wide excess carrier density (N >1018 cm-3) and temperature range (10 K to 300 K) revealed the twin defect density dependent ambipolar mobility value at RT as well as essentially different temperature dependences of mobility of the layers. The larger value of absorption cross section in more defective layer at 1064 nm wavelength pointed out to contribution of defect-assisted absorption, which gradually vanished after the filling defect states by free carriers.