On the Correlation of the Structural Perfection and Nonequilibrium Carrier Parameters in 3C SiC Heterostructures
p.219
p.219
Increase of SiC Substrate Resistance Induced by Annealing
p.223
p.223
Barrier Inhomogeneities of Mo Schottky Barrier Diodes on 4H-SiC
p.227
p.227
Fundamental Band Edge Absorption in 3C-SiC: Phonon Absorption Assisted Transitions
p.231
p.231
Electronic Structure and Momentum-Dependent Resonant Inelastic X-Ray Scattering in Broad Band Materials
p.235
p.235
Electronic Properties of Femtosecond Laser Induced Modified Spots on Single Crystal Silicon Carbide
p.239
p.239
Modeling of Boron Diffusion and Segregation in Poly-Si/4H-SiC Structures
p.243
p.243
Calculation of Lattice Constant of 4H-SiC as a Function of Impurity Concentration
p.247
p.247
Polytypism Study in SiC Epilayers Using Electron Backscatter Diffraction
p.251
p.251
Electronic Structure and Momentum-Dependent Resonant Inelastic X-Ray Scattering in Broad Band Materials
Abstract:
You might also be interested in these eBooks
Info:
Periodical:
Materials Science Forum (Volumes 645-648)
Pages:
235-238
Citation:
Online since:
April 2010
Authors:
Keywords:
Price:
Сopyright:
© 2010 Trans Tech Publications Ltd. All Rights Reserved
Share:
Citation: