Electronic Properties of Femtosecond Laser Induced Modified Spots on Single Crystal Silicon Carbide

Takuro Tomita; M. Iwami; M. Yamamoto; M. Deki; Shigeki Matsuo; Shuichi Hashimoto; Y. Nakagawa; T. Kitada; T. Isu; S. Saito; K. Sakai; Shinobu Onoda; Takeshi Ohshima

doi:10.4028/www.scientific.net/MSF.645-648.239

Paper Titles

Increase of SiC Substrate Resistance Induced by Annealing
p.223

Barrier Inhomogeneities of Mo Schottky Barrier Diodes on 4H-SiC
p.227

Fundamental Band Edge Absorption in 3C-SiC: Phonon Absorption Assisted Transitions
p.231

Electronic Structure and Momentum-Dependent Resonant Inelastic X-Ray Scattering in Broad Band Materials
p.235

Electronic Properties of Femtosecond Laser Induced Modified Spots on Single Crystal Silicon Carbide
p.239

Modeling of Boron Diffusion and Segregation in Poly-Si/4H-SiC Structures
p.243

Calculation of Lattice Constant of 4H-SiC as a Function of Impurity Concentration
p.247

Polytypism Study in SiC Epilayers Using Electron Backscatter Diffraction
p.251

Raman Characterization of Doped 3C-SiC/Si for Different Silicon Substrates and C/Si Ratios
p.255

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Electronic Properties of Femtosecond Laser Induced...

Electronic Properties of Femtosecond Laser Induced Modified Spots on Single Crystal Silicon Carbide

Abstract:

Femtosecond (fs) laser modification on single crystal silicon carbide (SiC) was studied from the viewpoints of electric conductivity. Fourier transform infrared (FTIR) spectroscopy was carried out on femtosecond laser modified area. The intensity decrease of reststrahlen band due to the modification was observed, and this decrease was explained by the degradation of crystallinity due to the laser irradiation. Polarization dependence of reststrahlen band was also observed on laser modified samples. Current-voltage characteristics and Hall measurements on fs-laser modified region were carried out by fabricating the metal contacts on the ion implanted areas. The specific resistance up to 5.9×10-2 m was obtained for fs-laser modified area.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2009

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Pages:

239-242

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.239

Citation:

Cite this paper

Online since:

April 2010

Authors:

Takuro Tomita, M. Iwami, M. Yamamoto, M. Deki, Shigeki Matsuo, Shuichi Hashimoto, Y. Nakagawa, T. Kitada, T. Isu, S. Saito, K. Sakai, Shinobu Onoda, Takeshi Ohshima

Keywords:

Femtosecond Laser, Infrared Spectrum

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] T. Tomita, K. Kinoshita, S. Matsuo, and S. Hashimoto: Appl. Phys. Lett. Vol. 90 (2007), p.153115.

Google Scholar

[2] T. Okada, H. Kawahara, Y. Ishida, R. Kumai, T. Tomita, S. Matsuo, S. Hashimoto, M. Kawamoto, Y. Makita, and M. Yamaguchi: Appl. Phys. A Vol. 92 (2008), p.665.

DOI: 10.1007/s00339-008-4611-2

Google Scholar

[3] T. Okada, T. Tomita, S. Matsuo, S. Hashimoto, Y. Ishida, S. Kiyama, and T. Takahashi: J. Appl. Phys. Vol. 106 (2009), p.054307.

Google Scholar

[4] K. Narita, Y. Hijikata, H. Yaguchi, S. Yoshida, and S. Nakashima: Jpn. J. Appl. Phys. Vol. 43 (2004), p.5151.

Google Scholar