Electronic Properties of Femtosecond Laser Induced Modified Spots on Single Crystal Silicon Carbide

Abstract:

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Femtosecond (fs) laser modification on single crystal silicon carbide (SiC) was studied from the viewpoints of electric conductivity. Fourier transform infrared (FTIR) spectroscopy was carried out on femtosecond laser modified area. The intensity decrease of reststrahlen band due to the modification was observed, and this decrease was explained by the degradation of crystallinity due to the laser irradiation. Polarization dependence of reststrahlen band was also observed on laser modified samples. Current-voltage characteristics and Hall measurements on fs-laser modified region were carried out by fabricating the metal contacts on the ion implanted areas. The specific resistance up to 5.9×10-2 m was obtained for fs-laser modified area.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

239-242

DOI:

10.4028/www.scientific.net/MSF.645-648.239

Citation:

T. Tomita et al., "Electronic Properties of Femtosecond Laser Induced Modified Spots on Single Crystal Silicon Carbide", Materials Science Forum, Vols. 645-648, pp. 239-242, 2010

Online since:

April 2010

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Price:

$35.00

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