Increase of SiC Substrate Resistance Induced by Annealing

Abstract:

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We report here an anisotropic increase in SiC bulk resistivity by annealing at 1150 °C, and discuss the implications for SiC devices. The increase in resistivity is resistivity dependent and can be (at least) partially reversed by a subsequent anneal at higher temperature. Ideal device performance is achievable with appropriate annealing steps during device processing.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

223-226

DOI:

10.4028/www.scientific.net/MSF.645-648.223

Citation:

T. L. Straubinger et al., "Increase of SiC Substrate Resistance Induced by Annealing", Materials Science Forum, Vols. 645-648, pp. 223-226, 2010

Online since:

April 2010

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Price:

$35.00

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