Paper Title:
Increase of SiC Substrate Resistance Induced by Annealing
  Abstract

We report here an anisotropic increase in SiC bulk resistivity by annealing at 1150 °C, and discuss the implications for SiC devices. The increase in resistivity is resistivity dependent and can be (at least) partially reversed by a subsequent anneal at higher temperature. Ideal device performance is achievable with appropriate annealing steps during device processing.

  Info
Periodical
Materials Science Forum (Volumes 645-648)
Edited by
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
Pages
223-226
DOI
10.4028/www.scientific.net/MSF.645-648.223
Citation
T. L. Straubinger, R. L. Woodin, T. Witt, J. Shovlin, G. M. Dolny, P. Sasahara, E. Schmitt, A. D. Weber, J. B. Casady, J. R. B. Casady, "Increase of SiC Substrate Resistance Induced by Annealing", Materials Science Forum, Vols. 645-648, pp. 223-226, 2010
Online since
April 2010
Keywords
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Price
$35.00
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