Nonequilibrium Carrier Recombination in Highly Excited Bulk SiC Crystals

Kęstutis Jarašiūnas; Patrik Ščajev; Vytautas Gudelis; Paul B. Klein; Masashi Kato

doi:10.4028/www.scientific.net/MSF.645-648.215

Paper Titles

Temperature and Injection Level Dependencies of Carrier Lifetimes in p-Type and n-Type 4H-SiC Epilayers
p.199

Temperature Dependence of the Carrier Lifetime in 4H-SiC Epilayers
p.203

Characterization of the Excess Carrier Lifetime of As-Grown and Electron Irradiated Epitaxial p-Type 4H-SiC Layers by the Microwave Photoconductivity Decay Method
p.207

CL/EBIC-SEM Techniques for Evaluation of Impact of Crystallographic Defects on Carrier Lifetime in 4H-SiC Epitaxial Layers
p.211

Nonequilibrium Carrier Recombination in Highly Excited Bulk SiC Crystals
p.215

On the Correlation of the Structural Perfection and Nonequilibrium Carrier Parameters in 3C SiC Heterostructures
p.219

Increase of SiC Substrate Resistance Induced by Annealing
p.223

Barrier Inhomogeneities of Mo Schottky Barrier Diodes on 4H-SiC
p.227

Fundamental Band Edge Absorption in 3C-SiC: Phonon Absorption Assisted Transitions
p.231

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Nonequilibrium Carrier Recombination in Highly Excited Bulk SiC Crystals

Abstract:

We applied time-resolved free carrier absorption (FCA) to monitor non-equilibrium carrier dynamics in 4H epilayers and 3C SiC bulk crystals at excess carrier densities in the N = 1017 - 1019 cm-3 range. The numerical fitting of FCA decay kinetics provided the linear and nonlinear carrier recombination rates in the 40-390 K range and the absorption cross-sections eh at 1064 nm. In 4H, the decrease of the bulk lifetime (800 ns) with excitation provided the bimolecular and Auger coefficients B=(1.2±0.4)×10-12 cm3/s and C=(7±4)×10-31cm6/s, respectively, at room temperature. These values for 3C were 55-150 ns, (2.0±0.4)×10-12 cm3/s, and (2±1)×10-32 cm6/s, respectively. The rate of linear and nonlinear recombination increased at lower temperatures. A value of eh =4.4×10-18 cm2 for 3C SiC at 1.064 m was found 2.3 times smaller than that for 4H SiC.