Calculation of Lattice Constant of 4H-SiC as a Function of Impurity Concentration

Abstract:

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Calculations of lattice constant of 4H-SiC and diamond have been carried out. Lattice constant of 4H-SiC trends to decrease when nitrogen concentration increases. On the other hand, lattice constant of 4H-SiC trends to increase when aluminum concentration increases. Lattice constant of boron and phosphorus doped diamond trends to increase when impurity concentration increases. The effect of phosphorus on diamond lattice constant is about six times larger than that of boron.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

247-250

DOI:

10.4028/www.scientific.net/MSF.645-648.247

Citation:

T. Matsumoto et al., "Calculation of Lattice Constant of 4H-SiC as a Function of Impurity Concentration", Materials Science Forum, Vols. 645-648, pp. 247-250, 2010

Online since:

April 2010

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$35.00

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