Low Temperature near Band Gap Photoluminescence of 3C-SiC/15R-SiC and 3C-SiC/6H-SiC Heterostructures

Alexander A. Lebedev; Pavel L. Abramov; Elena V. Bogdanova; Sergey Y. Davydov; Sergey P. Lebedev; Dmitrii K. Nelson; Gagik A. Oganesyan; Boris S. Razbirin; Alla S. Tregubova

doi:10.4028/www.scientific.net/MSF.645-648.259

Paper Titles

Modeling of Boron Diffusion and Segregation in Poly-Si/4H-SiC Structures
p.243

Calculation of Lattice Constant of 4H-SiC as a Function of Impurity Concentration
p.247

Polytypism Study in SiC Epilayers Using Electron Backscatter Diffraction
p.251

Raman Characterization of Doped 3C-SiC/Si for Different Silicon Substrates and C/Si Ratios
p.255

Low Temperature near Band Gap Photoluminescence of 3C-SiC/15R-SiC and 3C-SiC/6H-SiC Heterostructures
p.259

Determination of the Optical Bandgap of Thin Amorphous (SiC)_1-x(AlN)_x Films
p.263

Elastic Properties of Dense Organosilicate Glasses Dependent on the C/Si Ratio
p.267

A Pictorial Tracking of Basal Plane Dislocations in SiC Epitaxy
p.271

On the Luminescence and Driving Force of Stacking Faults in 4H-SiC
p.277

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Low Temperature near Band Gap Photoluminescence of...

Low Temperature near Band Gap Photoluminescence of 3C-SiC/15R-SiC and 3C-SiC/6H-SiC Heterostructures

Abstract:

Photoluminescence (PL) spectra of 3C-SiC(n,p)/6H-SiC(n) and 3C-SiC(p)/15R-SiC(n) heterostructures have been studied. A broad structureless band, absent in PL spectra of n–n heterostructures, was observed in the spectrum of p–n heterostructures in the energy range 2.2–2.4 eV. It is suggested that this band is due to the presence of a 2D electron gas in a quantum well near the heterointerface. High (~ 4000 cm2/s V) value of electron mobility and the absence of any significant fall in the mobility temperature dependence at liquid-nitrogen temperatures confirm the existence of a 2DEG in the QW at the heterointerface.

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Materials Science Forum (Volumes 645-648)

Pages:

259-262

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.259

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Online since:

April 2010

Authors:

Alexander A. Lebedev, Pavel L. Abramov, Elena V. Bogdanova, Sergey Y. Davydov, Sergey P. Lebedev, Dmitrii K. Nelson, Gagik A. Oganesyan, Boris S. Razbirin, Alla S. Tregubova

Keywords:

Bound Exciton, Heterostructures, Photoluminescence (PL), Quantum Well

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