Low Temperature near Band Gap Photoluminescence of 3C-SiC/15R-SiC and 3C-SiC/6H-SiC Heterostructures
Photoluminescence (PL) spectra of 3C-SiC(n,p)/6H-SiC(n) and 3C-SiC(p)/15R-SiC(n) heterostructures have been studied. A broad structureless band, absent in PL spectra of n–n heterostructures, was observed in the spectrum of p–n heterostructures in the energy range 2.2–2.4 eV. It is suggested that this band is due to the presence of a 2D electron gas in a quantum well near the heterointerface. High (~ 4000 cm2/s V) value of electron mobility and the absence of any significant fall in the mobility temperature dependence at liquid-nitrogen temperatures confirm the existence of a 2DEG in the QW at the heterointerface.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
A. A. Lebedev et al., "Low Temperature near Band Gap Photoluminescence of 3C-SiC/15R-SiC and 3C-SiC/6H-SiC Heterostructures", Materials Science Forum, Vols. 645-648, pp. 259-262, 2010