Modeling of Boron Diffusion and Segregation in Poly-Si/4H-SiC Structures
Boron diffusion in boron-doped poly-Si/nitrogen-doped 4H-SiC structure was investigated by combining a reported model of poly-Si diffusion sources with the authors’ model of boron diffusion in 4H-SiC. By taking the limited supply of carbon interstitials at heterointerfaces into account, we determined a segregation coefficient of 4 to 8 and an activation energy of 0.20 eV in the temperature range of 650 to 1000°C.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
K. Mochizuki et al., "Modeling of Boron Diffusion and Segregation in Poly-Si/4H-SiC Structures", Materials Science Forum, Vols. 645-648, pp. 243-246, 2010