Modeling of Boron Diffusion and Segregation in Poly-Si/4H-SiC Structures

Abstract:

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Boron diffusion in boron-doped poly-Si/nitrogen-doped 4H-SiC structure was investigated by combining a reported model of poly-Si diffusion sources with the authors’ model of boron diffusion in 4H-SiC. By taking the limited supply of carbon interstitials at heterointerfaces into account, we determined a segregation coefficient of 4 to 8 and an activation energy of 0.20 eV in the temperature range of 650 to 1000°C.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

243-246

DOI:

10.4028/www.scientific.net/MSF.645-648.243

Citation:

K. Mochizuki et al., "Modeling of Boron Diffusion and Segregation in Poly-Si/4H-SiC Structures", Materials Science Forum, Vols. 645-648, pp. 243-246, 2010

Online since:

April 2010

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