Modeling of Boron Diffusion and Segregation in Poly-Si/4H-SiC Structures

Kazuhiro Mochizuki; Haruka Shimizu; Natsuki Yokoyama

doi:10.4028/www.scientific.net/MSF.645-648.243

Paper Titles

Barrier Inhomogeneities of Mo Schottky Barrier Diodes on 4H-SiC
p.227

Fundamental Band Edge Absorption in 3C-SiC: Phonon Absorption Assisted Transitions
p.231

Electronic Structure and Momentum-Dependent Resonant Inelastic X-Ray Scattering in Broad Band Materials
p.235

Electronic Properties of Femtosecond Laser Induced Modified Spots on Single Crystal Silicon Carbide
p.239

Modeling of Boron Diffusion and Segregation in Poly-Si/4H-SiC Structures
p.243

Calculation of Lattice Constant of 4H-SiC as a Function of Impurity Concentration
p.247

Polytypism Study in SiC Epilayers Using Electron Backscatter Diffraction
p.251

Raman Characterization of Doped 3C-SiC/Si for Different Silicon Substrates and C/Si Ratios
p.255

Low Temperature near Band Gap Photoluminescence of 3C-SiC/15R-SiC and 3C-SiC/6H-SiC Heterostructures
p.259

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Modeling of Boron Diffusion and Segregation in Poly-Si/4H-SiC Structures

Abstract:

Boron diffusion in boron-doped poly-Si/nitrogen-doped 4H-SiC structure was investigated by combining a reported model of poly-Si diffusion sources with the authors’ model of boron diffusion in 4H-SiC. By taking the limited supply of carbon interstitials at heterointerfaces into account, we determined a segregation coefficient of 4 to 8 and an activation energy of 0.20 eV in the temperature range of 650 to 1000°C.