Polytypism Study in SiC Epilayers Using Electron Backscatter Diffraction

Abstract:

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The electron backscatter diffraction (EBSD) detector placed inside a commercial scanning electron microscope (SEM) has been used to study of different SiC polytypes. Different growth conditions in chemical vapor deposition (CVD) method were applied to obtain the 3C- and 4H-SiC polytypes epitaxial layers. Growth processes were conducted on the Si-face on-axis 4H-SiC substrates. The growth temperature was in the range of 1300-1620°C and the reactor pressure was 75mbar. The initial C/Si ratio was varied from 0.075 reaching final value of 1.8. It was observed that intentional ramping of the C/Si ratio at the first stage of the growth clearly influences the 4H/3C factor. The growth temperature and ramping of the C/Si ratio were the main parameters to achieve a homogeneous 3C and 4H-SiC epitaxial layers.

Info:

Periodical:

Materials Science Forum (Volumes 645-648)

Edited by:

Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller

Pages:

251-254

DOI:

10.4028/www.scientific.net/MSF.645-648.251

Citation:

K. Kościewicz et al., "Polytypism Study in SiC Epilayers Using Electron Backscatter Diffraction", Materials Science Forum, Vols. 645-648, pp. 251-254, 2010

Online since:

April 2010

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$35.00

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