Polytypism Study in SiC Epilayers Using Electron Backscatter Diffraction
The electron backscatter diffraction (EBSD) detector placed inside a commercial scanning electron microscope (SEM) has been used to study of different SiC polytypes. Different growth conditions in chemical vapor deposition (CVD) method were applied to obtain the 3C- and 4H-SiC polytypes epitaxial layers. Growth processes were conducted on the Si-face on-axis 4H-SiC substrates. The growth temperature was in the range of 1300-1620°C and the reactor pressure was 75mbar. The initial C/Si ratio was varied from 0.075 reaching final value of 1.8. It was observed that intentional ramping of the C/Si ratio at the first stage of the growth clearly influences the 4H/3C factor. The growth temperature and ramping of the C/Si ratio were the main parameters to achieve a homogeneous 3C and 4H-SiC epitaxial layers.
Anton J. Bauer, Peter Friedrichs, Michael Krieger, Gerhard Pensl, Roland Rupp and Thomas Seyller
K. Kościewicz et al., "Polytypism Study in SiC Epilayers Using Electron Backscatter Diffraction", Materials Science Forum, Vols. 645-648, pp. 251-254, 2010