Polytypism Study in SiC Epilayers Using Electron Backscatter Diffraction

Kinga Kościewicz; Wlodek Strupiński; Wojciech Wierzchowski; Krzysztof Wieteska; Andrzej Roman Olszyna

doi:10.4028/www.scientific.net/MSF.645-648.251

Paper Titles

Electronic Structure and Momentum-Dependent Resonant Inelastic X-Ray Scattering in Broad Band Materials
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Electronic Properties of Femtosecond Laser Induced Modified Spots on Single Crystal Silicon Carbide
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Modeling of Boron Diffusion and Segregation in Poly-Si/4H-SiC Structures
p.243

Calculation of Lattice Constant of 4H-SiC as a Function of Impurity Concentration
p.247

Polytypism Study in SiC Epilayers Using Electron Backscatter Diffraction
p.251

Raman Characterization of Doped 3C-SiC/Si for Different Silicon Substrates and C/Si Ratios
p.255

Low Temperature near Band Gap Photoluminescence of 3C-SiC/15R-SiC and 3C-SiC/6H-SiC Heterostructures
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Determination of the Optical Bandgap of Thin Amorphous (SiC)_1-x(AlN)_x Films
p.263

Elastic Properties of Dense Organosilicate Glasses Dependent on the C/Si Ratio
p.267

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Polytypism Study in SiC Epilayers Using Electron...

Polytypism Study in SiC Epilayers Using Electron Backscatter Diffraction

Abstract:

The electron backscatter diffraction (EBSD) detector placed inside a commercial scanning electron microscope (SEM) has been used to study of different SiC polytypes. Different growth conditions in chemical vapor deposition (CVD) method were applied to obtain the 3C- and 4H-SiC polytypes epitaxial layers. Growth processes were conducted on the Si-face on-axis 4H-SiC substrates. The growth temperature was in the range of 1300-1620°C and the reactor pressure was 75mbar. The initial C/Si ratio was varied from 0.075 reaching final value of 1.8. It was observed that intentional ramping of the C/Si ratio at the first stage of the growth clearly influences the 4H/3C factor. The growth temperature and ramping of the C/Si ratio were the main parameters to achieve a homogeneous 3C and 4H-SiC epitaxial layers.

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Materials Science Forum (Volumes 645-648)

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251-254

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https://doi.org/10.4028/www.scientific.net/MSF.645-648.251

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April 2010

Authors:

Kinga Kościewicz, Wlodek Strupiński, Wojciech Wierzchowski, Krzysztof Wieteska, Andrzej Roman Olszyna

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Electron Backscatter Diffraction (EBSD), On-Axis

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