Paper Titles
Effects of Sacrifice Oxidation on Characterization of Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy
p.271
Investigation of Additional States in the Silicon Carbide Surface after Diffusion Welding
p.275
Long Carrier Lifetimes in n-Type 4H-SiC Epilayers
p.279
Comparison of Post-Growth Carrier Lifetime Improvement Methods for 4H-SiC Epilayers
p.285
Radial Variation of Measured Carrier Lifetimes in Epitaxial Layers Grown with Wafer Rotation
p.289
High-Resolution Time-Resolved Carrier Lifetime and Photoluminescence Mapping of 4H-SiC Epilayers
p.293
Correlation of Extended Defects on Carrier Lifetime in Thick SiC Epilayers
p.297
Characterization of Annealed HPSI 4H-SiC for Photoconductive Semiconductor Switches
p.301
Correlation between Strain and Excess Carrier Lifetime in a 3C-SiC Wafer
p.305

Radial Variation of Measured Carrier Lifetimes in Epitaxial Layers Grown with Wafer Rotation

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Abstract:

In this report we present homoepitaxial growth of 4H-SiC on the Si-face of nominally on-axis substrates with diameter up to 100 mm in a hot-wall chemical vapor deposition reactor. A comparatively low carrier lifetime has been observed in these layers. Also, local variations in carrier lifetime are different from standard off-cut epilayers. The properties of layers were studied with more focus on charge carrier lifetime and its correlation with starting growth conditions, in-homogeneous surface morphology and different growth mechanisms.

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Periodical:

Materials Science Forum (Volumes 717-720)

Pages:

289-292

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.717-720.289

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Online since:

May 2012

Authors:

Peder Bergman, I.D. Booker, Louise Lilja, Jawad Hassan, Erik Janzén

Keywords:

Carrier Lifetime, Wafer Rotation

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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