Paper Titles
Comparative Study of Defects in 4H-SiC Epilayers Grown on 4o Off-Axis (0001) and (000-1) Substrates
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An Approach to Trace Defects Propagation during SiC Epitaxy
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Characterization of the Defect Evolution in Thick Heavily Al-Doped 4H-SiC Epilayers
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Crystal Growth of Highly Oriented Silicon Carbide by Chemical Vapor Deposition with Alternating Gas Supply
p.155
Effect of Process Parameters on Dislocation Density in Thick 4H-SiC Epitaxial Layers Grown by Chloride-Based CVD on 4° Off-Axis Substrates
p.159
50 μm-Thick 100 mm 4H-SiC Epitaxial Layer Growth by Warm-Wall Planetary Reactor
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Demonstration of High Quality 4H-SiC Epitaxy by Using the Two-Step Growth Method
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Simulation Study of High-Speed Wafer Rotation Effects in a Vertical Reactor for 4H-SiC Epitaxial Growth on 150 mm Substrates
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Revisiting the Thermochemical Database of Si-C-H System Related to SiC CVD Modeling
p.175

Effect of Process Parameters on Dislocation Density in Thick 4H-SiC Epitaxial Layers Grown by Chloride-Based CVD on 4° Off-Axis Substrates

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Abstract:

The effect of process parameters such as growth temperature, C/Si ratio, etching time, and Si/H2 ratio on dislocation density was investigated by performing KOH etching on 100 μm thick epitaxial layers grown on 4° off axis 4H-SiC substrates at various growth conditions by a chemical vapor deposition (CVD) process using a chloride-based chemistry to achieve growth rates exceeding 100 μm/h. We observe that the growth temperature and the growth rate have no significant influence on the dislocation density in the grown epitaxial layers. A low C/Si ratio increases the density of threading screw dislocations (TSD) markedly. The basal plane dislocation (BPD) density was reduced by using a proper in-situ etch prior to growth.

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

159-162

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.159

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Online since:

February 2014

Authors:

Milan Yazdanfar, Henrik Pedersen, Olof Kordina, Erik Janzén

Keywords:

4° Off-Axis Substrates, Chemical Vapor Deposition (CVD), Dislocation, Epitaxial Layer, Silicon Carbide (SiC)

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] S. Ha, P. Mieszkowski, M. Skowronski, L. B. Rowland, J. Cryst. Growth 244 (2002) 257-266.

Google Scholar

[2] J. P. Bergman, H. Jakobsson, L. Storasta, F. H. C. Carlsson, B. Magnusson, S. Sridhara, G. Pozina, H. Lendenmann, E. Janzén, Mater. Sci. Forum 389-393 (2002) 9-14.

DOI: 10.4028/www.scientific.net/msf.389-393.9

Google Scholar

[3] M.K. Das, J.J. Sumakeris, B.A. Hull, J. Richmond, S. Krishnaswami, A. R. Powell, Mater. Sci. Forum 483-485 (2005) 965-968.

DOI: 10.4028/www.scientific.net/msf.483-485.965

Google Scholar

[4] T. Ohno, H. Yamaguchi, S. Kuroda, K. Kojima, T. Suzuki, K. Arai, J. Cryst. Growth 271 (2004) 1-7.

Google Scholar

[5] T. Ohno, H. Yamaguchi, S. Kuroda, K. Kojima, T. Suzuki, K. Arai, J. Cryst. Growth 260 (2004) 209-216.

Google Scholar

[6] W. Chen, M. A. Capano, J. Appl. Phys. 98 (2005) 114907.

Google Scholar

[7] H. Tsuchida, M. Ito, I. Kamata, M. Nagano, Mater. Sci. Forum 615-617 (2009) 67-7.

Google Scholar

[8] Z. Zhang, T. S. Sudarshan, Appl. Phys. Lett. 87 (2005) 151913.

Google Scholar

[9] R. E. Stahlbush, B. L. VanMil, R. L. Myers-Ward, K-K. Lew, D. K. Gaskill, Appl. Phys. Lett. 94 (2009) 041916.

DOI: 10.1063/1.3070530

Google Scholar

[10] M. Yazdanfar, I. G. Ivanov, H. Pedersen, O. Kordina, E. Janzén, J. Appl. Phys. 113, (2013) 223502.

Google Scholar

[11] I. kamata, H. Tsuchida, T. Jikimoto, K. Izumi, Jpn. J. Appl. Phys. 41 (2002) L1137.

Google Scholar

[12] Y. Ishida, T. Takahashi, H. Okumara, K. Arai, S. Yoshida, Mater. Sci. Forum. 600-603 (2009) 473.

Google Scholar

[13] T. Hori, K. Danno, T. Kimoto, Mater. Sci. Forum. 556-557 (2007) 129.

Google Scholar