Application of Si-Vapor Ambient Anneal for Post Ion Implantation Anneal and Simultaneous Improvement of Trench Sidewall Smoothness
We propose the Si-vapor ambient anneal as a cap-free activation annealing (A/A) method for Silicon Carbide (SiC) using Tantalum Carbide / Tantalum composite materials (TaC/Ta). This method prevents the roughening of SiC surface by controlling the process function without conventional Carbon (C)-cap [1,2]. In this report, we evaluated the warping behavior of SiC wafer to confirm the effect of ion implantation (I/I) temperature (TI/I) and epi-ready treatment using Si-vapor ambient anneal. Wafer warp suppressing effect of high temperature I/I was confirmed and large wafer warpage occurred due to thinning of the wafer thickness. Furthermore we also observed the simultaneous improvement of the sharp edge shape and sidewall roughness of the trench under the appropriate conditions of the Si-vapor ambient anneal. It is possible to shape the round shape of the trench edge and to improve the roughness of trench sidewall by Si-vapor ambient anneal simultaneously with activation annealing process.
Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis
N. Yabuki et al., "Application of Si-Vapor Ambient Anneal for Post Ion Implantation Anneal and Simultaneous Improvement of Trench Sidewall Smoothness", Materials Science Forum, Vol. 924, pp. 345-348, 2018