Application of Si-Vapor Ambient Anneal for Post Ion Implantation Anneal and Simultaneous Improvement of Trench Sidewall Smoothness

Norihito Yabuki; Satoshi Torimi; Satoru Nogami; Makoto Kitabatake; Tadaaki Kaneko

doi:10.4028/www.scientific.net/MSF.924.345

Paper Titles

Influence of Aluminum Incorporation on Mechanical Properties of 3C-SiC Epilayers
p.318

Chemical Trend in Band Structure of 3d-Transition-Metal-Doped AlN Films
p.322

About the Electrical Activation of 1×10²⁰ cm^-3 Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500 - 1950°C
p.333

Metal/Semiconductor Contacts to Silicon Carbide: Physics and Technology
p.339

Application of Si-Vapor Ambient Anneal for Post Ion Implantation Anneal and Simultaneous Improvement of Trench Sidewall Smoothness
p.345

Characterization of pn-Diode Fabricated from Surface Damage-Free 4H-SiC Wafer Using Si-Vapor Etching Process
p.349

Effect of Ion Implantation-Induced Defects on Leakage Current Characteristics of IEMOS
p.353

Double Step Annealing for the Recovering of Ion Implantation Defectiveness in 4H-SiC DIMOSFET
p.357

Influence of Lateral Straggling of Implated Aluminum Ions on High Voltage 4H-SiC Device Edge Termination Design
p.361

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Application of Si-Vapor Ambient Anneal for Post Ion Implantation Anneal and Simultaneous Improvement of Trench Sidewall Smoothness

Abstract:

We propose the Si-vapor ambient anneal as a cap-free activation annealing (A/A) method for Silicon Carbide (SiC) using Tantalum Carbide / Tantalum composite materials (TaC/Ta). This method prevents the roughening of SiC surface by controlling the process function without conventional Carbon (C)-cap [1,2]. In this report, we evaluated the warping behavior of SiC wafer to confirm the effect of ion implantation (I/I) temperature (T_I/I) and epi-ready treatment using Si-vapor ambient anneal. Wafer warp suppressing effect of high temperature I/I was confirmed and large wafer warpage occurred due to thinning of the wafer thickness. Furthermore we also observed the simultaneous improvement of the sharp edge shape and sidewall roughness of the trench under the appropriate conditions of the Si-vapor ambient anneal. It is possible to shape the round shape of the trench edge and to improve the roughness of trench sidewall by Si-vapor ambient anneal simultaneously with activation annealing process.