4H-SiC Trench MOSFET with Ultra-Low On-Resistance by Using Miniaturization Technology

Aiko Ichimura; Yasuhiro Ebihara; Shuhei Mitani; Masato Noborio; Yuichi Takeuchi; Shoji Mizuno; Toshimasa Yamamoto; Kazuhiro Tsuruta

doi:10.4028/www.scientific.net/MSF.924.707

Paper Titles

TCAD Modeling of a 1200 V SiC MOSFET
p.689

Simulation-Based Sensitivity Analysis of Conduction and Switching Losses for Silicon Carbide Power MOSFETs
p.693

Reliability and Ruggedness of 1200V SiC Planar Gate MOSFETs Fabricated in a High Volume CMOS Foundry
p.697

4600 V Sic Dmosfets with R_DS,On = 17 mΩ-cm²
p.703

4H-SiC Trench MOSFET with Ultra-Low On-Resistance by Using Miniaturization Technology
p.707

Suppression of PBTI of SiC-MOSFETs under 100 kHz Gate-Switching Operation by Using a Gate Off-Voltage of -5 V
p.711

Short-Circuit Robustness of SiC Trench MOSFETs
p.715

Electrical Performances and Physics Based Analysis of 10kV SiC Power MOSFETs at High Temperatures
p.719

Impact of a Kelvin Source Connection on Discrete High Power SiC-MOSFETs
p.723

HomeMaterials Science ForumMaterials Science Forum Vol. 9244H-SiC Trench MOSFET with Ultra-Low On-Resistance...

4H-SiC Trench MOSFET with Ultra-Low On-Resistance by Using Miniaturization Technology

Abstract:

The authors have developed 4H-SiC trench MOSFETs with orthogonal Deep-P structures (ODSs) to improve the trade-off between the on-resistance and the gate oxide field. The conditions of photolithography to realize a miniaturized Deep-P pattern have been optimized. The fabricated MOSFETs with ODS have demonstrated a low on-resistance of 2 mΩcm² and a high breakdown voltage of 1.8 kV.