4H-SiC Trench MOSFET with Ultra-Low On-Resistance by Using Miniaturization Technology

Abstract:

Article Preview

The authors have developed 4H-SiC trench MOSFETs with orthogonal Deep-P structures (ODSs) to improve the trade-off between the on-resistance and the gate oxide field. The conditions of photolithography to realize a miniaturized Deep-P pattern have been optimized. The fabricated MOSFETs with ODS have demonstrated a low on-resistance of 2 mΩcm2 and a high breakdown voltage of 1.8 kV.

Info:

Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

707-710

Citation:

A. Ichimura et al., "4H-SiC Trench MOSFET with Ultra-Low On-Resistance by Using Miniaturization Technology", Materials Science Forum, Vol. 924, pp. 707-710, 2018

Online since:

June 2018

Export:

Price:

$38.00

* - Corresponding Author

[1] D. Peters, et. al. : ISPSD2017, pp.239-242.

[2] http://global-sei.com/technology/tr/bn80/pdf/80-16.pdf.

[3] Y. Kobayashi, et. al. : J. J. Appl. Phys. 56, 04CR08 (2017).

[4] Y. Nakano, et al. : Mater. Sci. Forum Vols.717-720 (2012), p.1069.

[5] https://www.denso.com/jp/ja/products-and-services/industrial-products/sic.