4H-SiC Trench MOSFET with Ultra-Low On-Resistance by Using Miniaturization Technology
The authors have developed 4H-SiC trench MOSFETs with orthogonal Deep-P structures (ODSs) to improve the trade-off between the on-resistance and the gate oxide field. The conditions of photolithography to realize a miniaturized Deep-P pattern have been optimized. The fabricated MOSFETs with ODS have demonstrated a low on-resistance of 2 mΩcm2 and a high breakdown voltage of 1.8 kV.
Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis
A. Ichimura et al., "4H-SiC Trench MOSFET with Ultra-Low On-Resistance by Using Miniaturization Technology", Materials Science Forum, Vol. 924, pp. 707-710, 2018