Suppression of PBTI of SiC-MOSFETs under 100 kHz Gate-Switching Operation by Using a Gate Off-Voltage of -5 V
Positive bias temperature instability (PBTI) is one of the crucial issues in SiC-MOSFETs’ introduction to automotive applications. We have investigated PBTI of commercially available SiC-MOSFETs under gate-switching operation to consider real power circuits operation. The use of negative gate off-voltage (Vgs(OFF)~-5 V) is shown to suppress Vth shift (ΔVth) under 100 kHz gate-switching operation. This gate voltage corresponds to the flat band condition, under which the electrons trapped by the near-interfacial traps are effectively detrapped through the interface states around the conduction band edge.
Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis
E. Murakami et al., "Suppression of PBTI of SiC-MOSFETs under 100 kHz Gate-Switching Operation by Using a Gate Off-Voltage of -5 V", Materials Science Forum, Vol. 924, pp. 711-714, 2018