Suppression of PBTI of SiC-MOSFETs under 100 kHz Gate-Switching Operation by Using a Gate Off-Voltage of -5 V

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Positive bias temperature instability (PBTI) is one of the crucial issues in SiC-MOSFETs’ introduction to automotive applications. We have investigated PBTI of commercially available SiC-MOSFETs under gate-switching operation to consider real power circuits operation. The use of negative gate off-voltage (Vgs(OFF)~-5 V) is shown to suppress Vth shift (ΔVth) under 100 kHz gate-switching operation. This gate voltage corresponds to the flat band condition, under which the electrons trapped by the near-interfacial traps are effectively detrapped through the interface states around the conduction band edge.

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Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

711-714

Citation:

E. Murakami et al., "Suppression of PBTI of SiC-MOSFETs under 100 kHz Gate-Switching Operation by Using a Gate Off-Voltage of -5 V", Materials Science Forum, Vol. 924, pp. 711-714, 2018

Online since:

June 2018

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$38.00

* - Corresponding Author

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