Suppression of Short-Circuit Current with Embedded Source Resistance in SiC-MOSFET

Hideyuki Hatta; Takaaki Tominaga; Shiro Hino; Naruhisa Miura; Shingo Tomohisa; Satoshi Yamakawa

doi:10.4028/www.scientific.net/MSF.924.727

Paper Titles

Suppression of PBTI of SiC-MOSFETs under 100 kHz Gate-Switching Operation by Using a Gate Off-Voltage of -5 V
p.711

Short-Circuit Robustness of SiC Trench MOSFETs
p.715

Electrical Performances and Physics Based Analysis of 10kV SiC Power MOSFETs at High Temperatures
p.719

Impact of a Kelvin Source Connection on Discrete High Power SiC-MOSFETs
p.723

Suppression of Short-Circuit Current with Embedded Source Resistance in SiC-MOSFET
p.727

3300V SiC DMOSFETs Fabricated in High-Volume 150 mm CMOS Fab
p.731

Effect of Negative Gate Bias on Single Pulse Avalanche Ruggedness of 1.2 kV Silicon Carbide MOSFETs
p.735

Static and Dynamic Characterization of a 3.3 Kv, 45 A 4H-Sic MOSFET
p.739

Influences of Bias Interruption and Reapplication on High-Temperature Threshold-Voltage Shifts of SiC DMOSFETs
p.743

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Suppression of Short-Circuit Current with Embedded Source Resistance in SiC-MOSFET

Abstract:

This work reports an SiC-MOSFET which replaces a part of the channel resistance with an additional embedded resistance, called a source resistance (R_s). MOSFETs with R_s have higher resistance during short circuit compared with MOSFETs without R_s and suppress short-circuit currents. An improvement of the trade-off relationship between short-circuit capability and on-resistance was obtained with MOSFETs including embedded R_s.