4600 V Sic Dmosfets with RDS,On = 17 mΩ-cm2

Siddarth G. Sundaresan; Stoyan Jeliazkov; Ranbir Singh

doi:10.4028/www.scientific.net/MSF.924.703

Paper Titles

1.2 kV 4H-SiC Split-Gate Power MOSFET: Analysis and Experimental Results
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TCAD Modeling of a 1200 V SiC MOSFET
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Simulation-Based Sensitivity Analysis of Conduction and Switching Losses for Silicon Carbide Power MOSFETs
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Reliability and Ruggedness of 1200V SiC Planar Gate MOSFETs Fabricated in a High Volume CMOS Foundry
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4600 V Sic Dmosfets with R_DS,On = 17 mΩ-cm²
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4H-SiC Trench MOSFET with Ultra-Low On-Resistance by Using Miniaturization Technology
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Suppression of PBTI of SiC-MOSFETs under 100 kHz Gate-Switching Operation by Using a Gate Off-Voltage of -5 V
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Short-Circuit Robustness of SiC Trench MOSFETs
p.715

Electrical Performances and Physics Based Analysis of 10kV SiC Power MOSFETs at High Temperatures
p.719

HomeMaterials Science ForumMaterials Science Forum Vol. 9244600 V Sic Dmosfets with RDS,On = 17 mΩ-cm2

4600 V Sic Dmosfets with R_DS,On = 17 mΩ-cm²

Abstract:

Large-area, 7.84 mm² SiC DMOSFETs feature breakdown voltages of 4600 V, specific on-resistance of 17 mΩ-cm² and gate threshold voltage of 2.4 V. The low on-resistance was enabled by an optimized MOS process that resulted in channel mobility as high as 27 cm²/Vs, and oxide breakdown fields in the 10-11 MV/cm range. The key device design and layout parameters were varied to examine the performance versus reliability trade-offs.