4600 V Sic Dmosfets with RDS,On = 17 mΩ-cm2

Abstract:

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Large-area, 7.84 mm2 SiC DMOSFETs feature breakdown voltages of 4600 V, specific on-resistance of 17 mΩ-cm2 and gate threshold voltage of 2.4 V. The low on-resistance was enabled by an optimized MOS process that resulted in channel mobility as high as 27 cm2/Vs, and oxide breakdown fields in the 10-11 MV/cm range. The key device design and layout parameters were varied to examine the performance versus reliability trade-offs.

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Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

703-706

Citation:

S. Sundaresan et al., "4600 V Sic Dmosfets with RDS,On = 17 mΩ-cm2", Materials Science Forum, Vol. 924, pp. 703-706, 2018

Online since:

June 2018

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$38.00

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[1] TT Mnatsakanov et al. Semiconductor Sci. Tech. 17, 974-977 (2002).