4600 V Sic Dmosfets with RDS,On = 17 mΩ-cm2
Large-area, 7.84 mm2 SiC DMOSFETs feature breakdown voltages of 4600 V, specific on-resistance of 17 mΩ-cm2 and gate threshold voltage of 2.4 V. The low on-resistance was enabled by an optimized MOS process that resulted in channel mobility as high as 27 cm2/Vs, and oxide breakdown fields in the 10-11 MV/cm range. The key device design and layout parameters were varied to examine the performance versus reliability trade-offs.
Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis
S. Sundaresan et al., "4600 V Sic Dmosfets with RDS,On = 17 mΩ-cm2", Materials Science Forum, Vol. 924, pp. 703-706, 2018