1.2 kV 4H-SiC Split-Gate Power MOSFET: Analysis and Experimental Results

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This paper presents a 1.2kV-rated 4H-SiC Split-Gate power MOSFET (SG-MOSFET) with superior high frequency figures-of-merit (HF-FOM). Electrical characteristics including reverse transfer capacitance and gate-to-drain charge are measured from fabricated devices on a 6-inch SiC wafer, demonstrating excellent performance. Compared to the conventional MOSFETs, the SG-MOSFET provides about 7x smaller HF-FOM [RonxCgd] and 2x smaller HF-FOM [RonxQgd] with improved reverse transfer capacitance and gate-to-drain charge.

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Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

684-688

Citation:

K. J. Han et al., "1.2 kV 4H-SiC Split-Gate Power MOSFET: Analysis and Experimental Results", Materials Science Forum, Vol. 924, pp. 684-688, 2018

Online since:

June 2018

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