1.2 kV 4H-SiC Split-Gate Power MOSFET: Analysis and Experimental Results

Ki Jeong Han; B. Jayant Baliga; Woong Je Sung

doi:10.4028/www.scientific.net/MSF.924.684

Paper Titles

Hole Trapping in the NBTI Characteristic of SiC MOSFETs
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Comprehensive Evaluation of Bias Temperature Instabilities on 4H-SiC MOSFETs Using Device Preconditioning
p.671

Switching Reliability of SiC-MOSFETs Containing Expanded Stacking Faults
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Vertical Tri-Gate Power MOSFETs in 4H-SiC
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1.2 kV 4H-SiC Split-Gate Power MOSFET: Analysis and Experimental Results
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TCAD Modeling of a 1200 V SiC MOSFET
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Simulation-Based Sensitivity Analysis of Conduction and Switching Losses for Silicon Carbide Power MOSFETs
p.693

Reliability and Ruggedness of 1200V SiC Planar Gate MOSFETs Fabricated in a High Volume CMOS Foundry
p.697

4600 V Sic Dmosfets with R_DS,On = 17 mΩ-cm²
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HomeMaterials Science ForumMaterials Science Forum Vol. 9241.2 kV 4H-SiC Split-Gate Power MOSFET: Analysis...

1.2 kV 4H-SiC Split-Gate Power MOSFET: Analysis and Experimental Results

Abstract:

This paper presents a 1.2kV-rated 4H-SiC Split-Gate power MOSFET (SG-MOSFET) with superior high frequency figures-of-merit (HF-FOM). Electrical characteristics including reverse transfer capacitance and gate-to-drain charge are measured from fabricated devices on a 6-inch SiC wafer, demonstrating excellent performance. Compared to the conventional MOSFETs, the SG-MOSFET provides about 7x smaller HF-FOM [R_onxC_gd] and 2x smaller HF-FOM [R_onxQ_gd] with improved reverse transfer capacitance and gate-to-drain charge.

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Periodical:

Materials Science Forum (Volume 924)

Pages:

684-688

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.924.684

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Online since:

June 2018

Authors:

Ki Jeong Han*, B. Jayant Baliga, Woong Je Sung

Keywords:

4H-SiC, Gate Charge, High Frequency FOM, MOSFET, Reverse Transfer Capacitance, Silicon Carbide (SiC), Split Gate, Terraced Gate

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