Magnetic Field Sensing with 4H SiC Diodes: N vs P Implantation

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We explore the magnetic sensing capabilities of two 4H-SiC n+p diodes fabricated by NASA Glenn which only differ in the implanted ion species, nitrogen and phosphorus, and the implant activation annealing time. We use low-and high-field electrically detected magnetic resonance (EDMR) to investigate the defect structure used to sense magnetic fields as well as to evaluate the sensitivity. In addition, we expose these devices to high energy electron radiation to evaluate the defect sensing capability in a harsh radiation environment. The results from this work will allow us to tailor our processing methods to design a more optimal 4H-SiC pn diode for magnetic field sensing in harsh environments.

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Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

988-992

Citation:

C. J. Cochrane et al., "Magnetic Field Sensing with 4H SiC Diodes: N vs P Implantation", Materials Science Forum, Vol. 924, pp. 988-992, 2018

Online since:

June 2018

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