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Paper Titles
Electrical Characterization of Integrated 2-Input TTL NAND Gate at Elevated Temperature, Fabricated in Bipolar SiС-Technology
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Inclusion of Body Bias Effect in SPICE Modeling of 4H-SiC Integrated Circuit Resistors
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High Temperature Behavior Prediction Techniques for Non-Uniform Ni/SiC Schottky Diodes
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Complementary p-Channel and n-Channel SiC MOSFETs for CMOS Integration
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An Improved I-V Model of GaN HEMT for High Temperature Applications
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Electrical Characterization of the Operational Amplifier Consisting of 4H-SiC MOSFETs after Gamma Irradiation
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Magnetic Field Sensing with 4H SiC Diodes: N vs P Implantation
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Magnetic Field Sensing with 4H SiC Diodes: N vs P Implantation

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Abstract:

We explore the magnetic sensing capabilities of two 4H-SiC n+p diodes fabricated by NASA Glenn which only differ in the implanted ion species, nitrogen and phosphorus, and the implant activation annealing time. We use low-and high-field electrically detected magnetic resonance (EDMR) to investigate the defect structure used to sense magnetic fields as well as to evaluate the sensitivity. In addition, we expose these devices to high energy electron radiation to evaluate the defect sensing capability in a harsh radiation environment. The results from this work will allow us to tailor our processing methods to design a more optimal 4H-SiC pn diode for magnetic field sensing in harsh environments.

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Periodical:

Materials Science Forum (Volume 924)

Pages:

988-992

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.924.988

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Online since:

June 2018

Authors:

Corey J. Cochrane*, Hannes Kraus, Philip G. Neudeck, David J. Spry, Ryan J. Waskiewicz, James Ashton, Patrick M. Lenahan

Keywords:

Atomic Scale Defects, Electrically Detected Magnetic Resonance, Magnetometer, Magnetoresistance, Spin Dependent Recombination

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© 2018 Trans Tech Publications Ltd. All Rights Reserved

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