Selective Si3N4 Etch in Single Wafer Application

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Periodical:

Solid State Phenomena (Volumes 103-104)

Edited by:

Paul Mertens, Marc Meuris and Marc Heyns

Pages:

103-106

DOI:

10.4028/www.scientific.net/SSP.103-104.103

Citation:

D. M. Knotter et al., "Selective Si3N4 Etch in Single Wafer Application", Solid State Phenomena, Vols. 103-104, pp. 103-106, 2005

Online since:

April 2005

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$38.00

[1] D. M. Knotter: J. Am. Chem. Soc. 122 (2000), p.4345.

[2] D. M. Knotter and T. J. J. Denteneer: J. Electrochem. Soc. 148 (2001), p. F43.

[3] C. A. Deckert: J. Electrochem. Soc. 127 (1980), p.2433.

[4] V. Harrap: Semiconductor Silicon 1973 (H. R. Huff and R. R. Burgess, Editors, The Electrochemical Society, Princeton, NJ, 1973), p.354.

[5] W. van Gelder and V. E. Hauser: J. Electrochem. Soc. 114 (1967) 869-72.

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