Selective Si3N4 Etch in Single Wafer Application

D. Martin Knotter; Nigel Stewart; Ian Sharp

doi:10.4028/www.scientific.net/SSP.103-104.103

Paper Titles

Insights into Watermark Formation and Control
p.83

Occurrence of Arsenic-Based Defects and Techniques for Their Elimination
p.87

Selective Wet Removal of Hf-Based Layers and Post-Dry Etch Residues in High-k and Metal Gate Stacks
p.93

HF Based Solutions for HfO₂ Removal; Effect of pH and Temperature on HfO₂: SiO₂ Etch Selectivity
p.97

Selective Si₃N₄ Etch in Single Wafer Application
p.103

Etch Rate Depth Profiling by Single Wafer Etching Equipment
p.107

Novel Chemical Etching to Correct Film Thickness Distributions
p.111

Etching of Silicon Oxide Films in Supercritical Carbon Dioxide
p.115

Challenges of Finer Particle Detection on Bulk-Silicon and SOI Wafers
p.121

HomeSolid State PhenomenaSolid State Phenomena Vols. 103-104Selective Si3N4 Etch in Single Wafer Application

Selective Si₃N₄ Etch in Single Wafer Application

Abstract:

You might also be interested in these eBooks

Ultra Clean Processing of Silicon Surfaces VII

View Preview

Info:

Periodical:

Solid State Phenomena (Volumes 103-104)

Pages:

103-106

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.103-104.103

Citation:

Cite this paper

Online since:

April 2005

Authors:

D. Martin Knotter, Nigel Stewart, Ian Sharp

Keywords:

High-Pressure, Silicon Nitride Etch, Ultra Diluted HF

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] D. M. Knotter: J. Am. Chem. Soc. 122 (2000), p.4345.

Google Scholar

[2] D. M. Knotter and T. J. J. Denteneer: J. Electrochem. Soc. 148 (2001), p. F43.

Google Scholar

[3] C. A. Deckert: J. Electrochem. Soc. 127 (1980), p.2433.

Google Scholar

[4] V. Harrap: Semiconductor Silicon 1973 (H. R. Huff and R. R. Burgess, Editors, The Electrochemical Society, Princeton, NJ, 1973), p.354.

Google Scholar

[5] W. van Gelder and V. E. Hauser: J. Electrochem. Soc. 114 (1967) 869-72.

Google Scholar