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HF Based Solutions for HfO₂ Removal; Effect of pH and Temperature on HfO₂: SiO₂ Etch Selectivity
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Selective Si₃N₄ Etch in Single Wafer Application
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Etch Rate Depth Profiling by Single Wafer Etching Equipment
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Novel Chemical Etching to Correct Film Thickness Distributions
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Etching of Silicon Oxide Films in Supercritical Carbon Dioxide
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Challenges of Finer Particle Detection on Bulk-Silicon and SOI Wafers
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HomeSolid State PhenomenaSolid State Phenomena Vols. 103-104Etch Rate Depth Profiling by Single Wafer Etching...

Etch Rate Depth Profiling by Single Wafer Etching Equipment

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Abstract:

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Ultra Clean Processing of Silicon Surfaces VII

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Periodical:

Solid State Phenomena (Volumes 103-104)

Pages:

107-110

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.103-104.107

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Online since:

April 2005

Authors:

Enrico Bellandi, Alice C. Elbaz, Rosella Piagge, Francesco Pipia, Mauro Alessandri

Keywords:

Etch Rate Profiling, Single Wafer

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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