HF Based Solutions for HfO2 Removal; Effect of pH and Temperature on HfO2: SiO2 Etch Selectivity

Abstract:

Article Preview

Info:

Periodical:

Solid State Phenomena (Volumes 103-104)

Edited by:

Paul Mertens, Marc Meuris and Marc Heyns

Pages:

97-102

DOI:

10.4028/www.scientific.net/SSP.103-104.97

Citation:

V. Paraschiv et al., "HF Based Solutions for HfO2 Removal; Effect of pH and Temperature on HfO2: SiO2 Etch Selectivity", Solid State Phenomena, Vols. 103-104, pp. 97-102, 2005

Online since:

April 2005

Keywords:

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.