[1]
M. Claes, V. Paraschiv, H. Boutkabout, O. Richard, R. Lindsay, S. De Gendt, W. Boullart and M. Heyns, "Selective wet etching of high-k layers". 204th ECS Meeting, Orlando, Florida, 12-16 oct., Abs.# 550, (2003), USA. 2] J. Barnett, D. Riley, T. C. Messina, P. Lysaght, "Wet etch enhancement of HfO2 films by implant processing" Proceedigs of UCPSS UltraClean Processing Technology, September 16, p.11, (2002), Oostende, Belgium (http:/ucpss.com/programme.htm).
DOI: 10.4028/www.scientific.net/ssp.92.11
Google Scholar
[3]
K.L Saenger, H.F. Okorn-Schmidt, C. P. D'Emic, Mat. Res. Soc. Symp. Proc. 745, 7ed9 (2003).
Google Scholar
[4]
D. Watanabe, H. Momota, T. Kezuka, T. Kanemura, M. Itano, D. Riley, J. Barnett, SPWC Conference, Feb. (2003), California .
Google Scholar
[5]
S. Verhaverbeke, I. Teerlinck, C. Vinckier, G. Stevens, R. Cartuyvels, M. M. Heyns, J. Electrochem. Soc., 141(10), (1994), p.2852.
DOI: 10.1149/1.2059243
Google Scholar
[6]
B. Garrido, J. Montserrat, J. R. Morante, J. Electrochem. Soc, 143(12), (1996), p.4059.
Google Scholar
[7]
P. Luxemburg, J. I. Kim, Z. Phys. Chem., 121, (1980), p.187
Google Scholar