Selective Wet Removal of Hf-Based Layers and Post-Dry Etch Residues in High-k and Metal Gate Stacks

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Periodical:

Solid State Phenomena (Volumes 103-104)

Edited by:

Paul Mertens, Marc Meuris and Marc Heyns

Pages:

93-96

DOI:

10.4028/www.scientific.net/SSP.103-104.93

Citation:

M. Claes et al., "Selective Wet Removal of Hf-Based Layers and Post-Dry Etch Residues in High-k and Metal Gate Stacks", Solid State Phenomena, Vols. 103-104, pp. 93-96, 2005

Online since:

April 2005

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$35.00

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