Novel Chemical Etching to Correct Film Thickness Distributions

Hajime Ugajin; Hayato Iwamoto; Kei Kinoshita

doi:10.4028/www.scientific.net/SSP.103-104.111

Paper Titles

Selective Wet Removal of Hf-Based Layers and Post-Dry Etch Residues in High-k and Metal Gate Stacks
p.93

HF Based Solutions for HfO₂ Removal; Effect of pH and Temperature on HfO₂: SiO₂ Etch Selectivity
p.97

Selective Si₃N₄ Etch in Single Wafer Application
p.103

Etch Rate Depth Profiling by Single Wafer Etching Equipment
p.107

Novel Chemical Etching to Correct Film Thickness Distributions
p.111

Etching of Silicon Oxide Films in Supercritical Carbon Dioxide
p.115

Challenges of Finer Particle Detection on Bulk-Silicon and SOI Wafers
p.121

The Impact of Backside Particles on the Limits of Optical Lithography
p.129

Inspection Challenges at the 45nm Technology Node
p.133

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Novel Chemical Etching to Correct Film Thickness Distributions

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Periodical:

Solid State Phenomena (Volumes 103-104)

Pages:

111-114

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.103-104.111

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Online since:

April 2005

Authors:

Hajime Ugajin, Hayato Iwamoto, Kei Kinoshita

Keywords:

Correction Etching, High Density Plasma Chemical Vapor Deposition, Uniformity

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