[1]
T. Hattori (Ed.): Ultra Clean Surface Processing of Silicon Wafers, Springer-Verlag, Berlin and New York (1998).
Google Scholar
[2]
T. Hattori: "Particle Reduction in VLSI Manufacturing," in Contamination Control and Defect Reduction in Semiconductor Manufacturing III, Electrochemical Society Proceedings vol. 94-9, pp.3-14 (1994).
Google Scholar
[3]
T. Hattori: "Chemical Contamination Control in ULSI Wafer Processing," in Characterization and Metrology for ULSI Technology 2000, American Institute of physics Conference Proceedings vol. 550, pp.275-284 (2001).
DOI: 10.1063/1.1354411
Google Scholar
[4]
K. Saga and T. Hattori: "Characterization of Trace Organic Contamination on Silicon Surfaces in Semiconductor Manufacturing," in ALTECH 2003, Electrochemical Society proceedings vol. 2003-03, pp.136-149 (2003).
Google Scholar
[5]
T. Hattori: "Detection and Analysis of Particles in Production Lines", in Ref. [1], pp.243-258 (1998).
Google Scholar
[6]
T. Hattori: "Detection and Identification of Particles on Silicon Surfaces," in Particles on Surfaces, Marcel Dekker, New York, pp.201-217 (1995).
Google Scholar
[7]
T. Hattori: "Detection and Analysis of Particles on Silicon Wafers," in Proc. VLSI Technology Workshop, Kyoto, May 16, 1993, IEEE Electron Device Society, New York, pp.153-212 (1993).
Google Scholar
[8]
T. Hattori and S. Koyata: "Applications of an Automated Particle Detection and Identification System in VLSI Wafer Processing," in SPIE Conference Proceedings, vol.1464, pp.367-376 (1991).
DOI: 10.1117/12.44449
Google Scholar
[9]
International Technology Roadmap for Semiconductors (ITRS) 2003 Edition, semiconductor Industry Association (2003).
Google Scholar
[10]
T. Hattori: "Challenges of Finer Particle Detection on Unpatterned Silicon Wafers," in Characterization and metrology for ULSI Technology, American Institute of physics conference Proceedings vol. 683, pp.271-273 (2003).
DOI: 10.1063/1.1622481
Google Scholar
[11]
John. C. Stover: Optical Scattering: Measurement and analysis, SPIE Press, Bellingham, p.18 (1995).
Google Scholar
[12]
A news release from Sony Precision Technology, Tokyo, Japan. (URL: http://www.sonypt.co.jp/en/)
Google Scholar
[13]
K. Nakai et. al: "Formation of Grown-in Defects in Nitrogen Doped CZ-Si Crystals," in Proc. 3rd International Symp. Advanced Science and Technology of Silicon Materials, Hawaii, November 22-26, 2004, pp.88-95 (2000).
Google Scholar
[14]
T. Hattori, T. Osaka, A. Okamoto, S. saga, and H. Kuniyasu, J. Electrochemical Society, 145, pp.3279-3284 (1998).
Google Scholar
[15]
T. Hattori: "Single-Wafer Spin Cleaning with Repetitive Use of Ozonated Water and Dilute HF ("SCROD"), in Cleaning Technology in Semiconductor Device Manufacturing VII, ECS Proceedings vol. 2001-26, pp.3-14 (2001).
Google Scholar
[16]
T. Hattori, MICRO, 21, no.1, pp.49-57 (2003).
Google Scholar