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HomeSolid State PhenomenaSolid State Phenomena Vols. 103-104Novel Photo Resist Stripping for Single Wafer...

Novel Photo Resist Stripping for Single Wafer Process

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Periodical:

Solid State Phenomena (Volumes 103-104)

Pages:

297-300

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.103-104.297

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Online since:

April 2005

Authors:

Atsushi Okuyama, Kazumi Asada, Hitoshi Abe, Hayato Iwamoto, Yoshio Okamoto, Takuya Wada

Keywords:

High Dose Ion Implantation, Non Ashing, Resist Stripping, Single Wafer Process

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Сopyright:

© 2005 Trans Tech Publications Ltd. All Rights Reserved

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Citation:

[1] M.Itano et al; IEEE Trans. On Semicond.Manufact., 6 (3), pp.258-267, 1993.

[2] M.M. Heyns et al; Proc. AMDP, March 3-5 1994, pp.59-66, Sendai, Japan.

[3] K.Hirose et al; "Ion-implanted photoresist and damage-free stripping," J. Electrochem. Soc., Vol.141, No.1, pp.192-205

DOI: 10.1149/1.2054683