Deposition Behavior of Volatile Acidic Contaminants on Metallic Interconnect Surfaces

Hervé Fontaine; Marc Veillerot; Adrien Danel

doi:10.4028/www.scientific.net/SSP.103-104.365

Paper Titles

Effect of Chemical Solution on the Stability of Low-k Films
p.349

Aqueous Based Single Wafer Cu/Low-k Cleaning Process Characterization and Integration into Dual Damascene Process Flow
p.353

Via Cleaning Technology for Post Etch Residues
p.357

Barrier and Copper Seedlayer Wet Etching
p.361

Deposition Behavior of Volatile Acidic Contaminants on Metallic Interconnect Surfaces
p.365

Effects of Patterns on Corrosion in Cu CMP
p.369

Advanced Aqueous Cleaner II: PER Removal from Sensitive Cu/Low-k Devices
p.373

Advanced Aqueous Cleaner I, Dilute Solutions for the Selective Removal of Post Etch Residues in the Presence of Aluminium
p.377

New Post Etch Polymer Removal Process for Al-Interconnects and Vias in Tank and Spray Tools Using a New Inorganic Chemistry
p.381

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Deposition Behavior of Volatile Acidic Contaminants on Metallic Interconnect Surfaces

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Periodical:

Solid State Phenomena (Volumes 103-104)

Pages:

365-368

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.103-104.365

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Online since:

April 2005

Authors:

Hervé Fontaine, Marc Veillerot, Adrien Danel

Keywords:

Airborn Molecular Contamination (AMC), Aluminum (Al), Copper (Cu), HBr, HCl, HF, Sticking Coefficient

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References

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