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Adhesion and Removal of Silica and Ceria Particles on the Wafer Surfaces in STI and Poly Si CMP
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Particle-Substrate Interaction Forces in a Non-Polar Liquid
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Interaction Forces between Oxide and Silica-Modified Terpolymer Abrasive and their Impact on CMP and Post-CMP
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Particle Deposition and Removal from Ge Wafers
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A Study of a Single-Wafer Process in Metal Contact Hole Cleaning
p.177

The Active Role of Etch Products in Particle Removal by SC-1 Solutions
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New FEOL Cleaning Technology for Advanced Devices beyond 45 nm Node
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In Situ Particle Removal Studies Using an Optical Particle Counter
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Removal of Nano-Particles by Mixed-Fluid Jet: Evaluation of Cleaning Performance and Comparison with Megasonic
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HomeSolid State PhenomenaSolid State Phenomena Vol. 134A Study of a Single-Wafer Process in Metal Contact...

A Study of a Single-Wafer Process in Metal Contact Hole Cleaning

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Periodical:

Solid State Phenomena (Volume 134)

Pages:

177-180

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.134.177

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Online since:

November 2007

Authors:

Jae Yong Park, Jong Kook Song, Han Mil Kim, Hee Kang Cho, Tae Gyun Kim, Bong Ho Moon, Eun Su Rho, Leo Archer, Won Ho Cho

Keywords:

Edge Defects, Flowing Defects, Metal Contact Clean, Single Wafer Processing, Wet Bench

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© 2008 Trans Tech Publications Ltd. All Rights Reserved

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