Removal of Nano-Particles by Mixed-Fluid Jet: Evaluation of Cleaning Performance and Comparison with Megasonic

Article Preview

Abstract:

Cleaning of nano-particles is becoming a major challenge in semiconductor manufacturing as efficient particle removal must be achieved without substrate loss and without damage to fragile structures. In this work cleaning performance and structural damage by a mixed fluid-jet technique were evaluated and directly compared to the performance of several megasonic systems. The test vehicles were hydrophilic Si wafers contaminated with 78-nm SiO2 particles and 70-nm poly-gatestack line patterned wafers. The results showed a broader process window for particle removal without damaging for the mixed fluid-jet technique compared to the megasonic systems.

You might also be interested in these eBooks

Info:

Periodical:

Solid State Phenomena (Volume 134)

Pages:

193-196

Citation:

Online since:

November 2007

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2008 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] The International Technology Roadmap for Semiconductors, http/public. itrs. net/ (2005).

Google Scholar

[2] G. Vereecke, F. Holsteyns, S. Arnauts, K. Kenis, M. Lux, R. Vos, J. Snow, and P.W. Mertens: Solid State Phenom. 103-104 (2005), p.141.

DOI: 10.4028/www.scientific.net/ssp.103-104.141

Google Scholar

[3] I. Kanno, N. Yokoi, and K. Sato: Electrochem. Soc. Proc. Vol. PV 97-35 (1998), p.54.

Google Scholar

[4] T. Yoneda, H. Hoko, E. Hoshino, T. Ogawa, S. Okazaki, Y. Isobe, T. Matsumoto, and T. Mizoguchi: Microelectronic Eng. 61-62 (2002), p.213.

DOI: 10.1016/s0167-9317(02)00586-5

Google Scholar

[5] A. Eitoku, J. Snow, R. Vos, M. Sato, S. Hirae, K. Nakajima, M. Nonomura, M. Imai, P.W. Mertens, and M.M. Heyns: Solid State Phenom. 92 (2003), p.157.

DOI: 10.4028/www.scientific.net/ssp.92.157

Google Scholar

[6] A. Eitoku, J. Snow, R. Vos, K. Kenis, and P.W. Mertens: Solid State Phenom. 103-104 (2005), p.177.

DOI: 10.4028/www.scientific.net/ssp.103-104.177

Google Scholar

[7] S. Verhaverbeke, R. Gouk, E. Porras, A. Ko, R. Endo, B. Brown, and J.T.C. Lee: ECS Trans. 1 (2005), p.127.

Google Scholar

[8] H. Hirano, K. Sato, T. Osaka, H. Kuniyasu, and T. Hattori: Electrochem. Solid-State Lett. 9 (2006), p. G62.

Google Scholar

[9] G. Vereecke, F. Holsteyns, J. Veltens, M. Lux, S. Arnauts, K. Kenis, R. Vos, P.W. Mertens, and M.M. Heyns: Proc. 8th Int. Symp. Cleaning Technol. in Semicond. Dev. Manuf., Eds. J. Ruzyllo, T. Hattori, R. Opila, and R.E. Novak, Electrochem. Soc. PV 2003-26, (2004).

DOI: 10.4028/www.scientific.net/ssp.92.27

Google Scholar

[10] S.H. Yoo, B.Y.H. Liu, J. Sun, N. Narayanswami, and G. Thomes: Solid State Phenom. 76-77 (2001), p.259.

Google Scholar

[11] K. Xu, R. Vos, G. Vereecke, M. Lux, W. Fyen, F. Holsteyns, K. Kenis, P.W. Mertens, M.M. Heyns, and C. Vinckier: Solid State Phenom. 92 (2003), p.161.

DOI: 10.4028/www.scientific.net/ssp.92.161

Google Scholar

[12] N. Hirano, K. Takayama, J. Falcovitz, T. Kataoka, K. Shimada, and E. Ando: Solid State Phenom. 65-66 (1999), p.207.

DOI: 10.4028/www.scientific.net/ssp.65-66.207

Google Scholar