Paper Titles

Aging Phenomena in the Removal of Nano-Particles from Si Wafers
p.155

Adhesion and Removal of Silica and Ceria Particles on the Wafer Surfaces in STI and Poly Si CMP
p.159

Particle-Substrate Interaction Forces in a Non-Polar Liquid
p.165

Interaction Forces between Oxide and Silica-Modified Terpolymer Abrasive and their Impact on CMP and Post-CMP
p.169

Particle Deposition and Removal from Ge Wafers
p.173

A Study of a Single-Wafer Process in Metal Contact Hole Cleaning
p.177

The Active Role of Etch Products in Particle Removal by SC-1 Solutions
p.181

New FEOL Cleaning Technology for Advanced Devices beyond 45 nm Node
p.185

In Situ Particle Removal Studies Using an Optical Particle Counter
p.189

HomeSolid State PhenomenaSolid State Phenomena Vol. 134Particle Deposition and Removal from Ge Wafers

Particle Deposition and Removal from Ge Wafers

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Ultra Clean Processing of Semiconductor Surfaces VIII

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Periodical:

Solid State Phenomena (Volume 134)

Pages:

173-176

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.134.173

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Online since:

November 2007

Authors:

Sonja Sioncke, Marcel Lux, Wim Fyen, Marc Meuris, Paul W. Mertens, Antoon Theuwis

Keywords:

Cleaning, Etching, Germanium, Particle Deposition, Particle Removal

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© 2008 Trans Tech Publications Ltd. All Rights Reserved

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[1] S.M. Sze: Physics of Semiconductor Devices, 2nd Ed., (Wiley, New York, 1981), p.46.

[2] W. Kern, in: Handbook of Semiconductor Wafer Cleaning Technology, (Noyes Publications, New Yersey, 1993).

[3] S. Sioncke, B. Onsia, K. Struys, J. Rip, R. Vos, M. Meuris, P. Mertens, A. Theuwis, ECS Transactions, 1 (3), (2005) p.220.

DOI: 10.1149/ma2005-02/20/780

[4] W. Fyen, J. Van Steenbergen, K. Xu, R. Vos, P. Mertens, M. Heyns, Solid State Phenomena, 92 (2003), pp.53-56.

DOI: 10.4028/www.scientific.net/ssp.92.53

[5] M. Meuris, P. W. Mertens, A. Opdebeeck, H.F. Schmidt, M. Depas, G. Vereecke, M.M. Heyns, A. Philipossian, Solid State Technology (1995), pp.109-113.