The Dependence of Chemical Mechanical Polishing Residue Removal on Post-Cleaning Treatments

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Periodical:

Solid State Phenomena (Volume 134)

Edited by:

Paul Mertens, Marc Meuris and Marc Heyns

Pages:

303-306

DOI:

10.4028/www.scientific.net/SSP.134.303

Citation:

J. G. Choi et al., "The Dependence of Chemical Mechanical Polishing Residue Removal on Post-Cleaning Treatments ", Solid State Phenomena, Vol. 134, pp. 303-306, 2008

Online since:

November 2007

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[1] Yong-Soo Choi, et. al, PacRim, (2004), P. 103.

[2] Woo-Jin Lee, et. al, Thin solid film, (2005), P. 145.

[3] D. J. Riley, et. al, Proc. 36th Ann. Tech. Meeting of the Ins. of Envir. Science, (1990) 224.

[4] M. Itano, et. al, IEEE Trans. Semicond. Manufact., Vol. 5, No. 2 (1992) 114.

[5] M. Itano, et. al, IEEE Trans. Semicond. Manufact., Vol. 6, No. 3 (1993) 258.

[6] M. Itano, et. al. IEEE Trans, no. 3, (1993).

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29 Defect size(um) ea Before After BOE-H After BOE-L.

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