Effects of Bias, Pressure and Temperature in Plasma Damage of Ultra Low-k Films

A.M. Urbanowicz; A. Humbert; G. Mannaert; Z. Tokei; Mikhail R. Baklanov

doi:10.4028/www.scientific.net/SSP.134.317

Paper Titles

Effect of an Organic Inhibitor in High pH Chemical Rinse on the Platen for Cu-CMP
p.299

The Dependence of Chemical Mechanical Polishing Residue Removal on Post-Cleaning Treatments
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A Novel Surface Cleaning for Copper Interconnection Using Ammonium Decomposed Species Generated by Hot Wire
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Improvement of Contact Clean Using Single-Wafer Clean Process for 90nm and Beyond
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Effects of Bias, Pressure and Temperature in Plasma Damage of Ultra Low-k Films
p.317

Impact of Plasma and Diluted HF on a CoWP Material
p.321

Photoresist Characterization and Wet Strip after Low-k Dry Etch
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Implications of the Selectiveness of Cu Chelators on Cu⁰, Cu(I)O and Cu(II)O Powders
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Impact of Organic Acid and Gas Bubbling on Copper and Copper Oxide Etch-Rates in Diluted HF Solution
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Effects of Bias, Pressure and Temperature in Plasma Damage of Ultra Low-k Films

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Periodical:

Solid State Phenomena (Volume 134)

Pages:

317-320

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.134.317

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Online since:

November 2007

Authors:

A.M. Urbanowicz, A. Humbert, G. Mannaert, Z. Tokei, Mikhail R. Baklanov

Keywords:

Bias Potential, Cleaning Plasmas, Low-k Dielectric, Plasma Damage

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References

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