Implications of the Selectiveness of Cu Chelators on Cu0, Cu(I)O and Cu(II)O Powders

Jennie Macdougall; Chris Reid; Larry McGhee

doi:10.4028/www.scientific.net/SSP.134.329

Paper Titles

Improvement of Contact Clean Using Single-Wafer Clean Process for 90nm and Beyond
p.313

Effects of Bias, Pressure and Temperature in Plasma Damage of Ultra Low-k Films
p.317

Impact of Plasma and Diluted HF on a CoWP Material
p.321

Photoresist Characterization and Wet Strip after Low-k Dry Etch
p.325

Implications of the Selectiveness of Cu Chelators on Cu⁰, Cu(I)O and Cu(II)O Powders
p.329

Impact of Organic Acid and Gas Bubbling on Copper and Copper Oxide Etch-Rates in Diluted HF Solution
p.333

Marangoni Dryer Integrated High Performance Cleaner for Cu/Low k Post Strip Clean for 45nm Technology Node and Beyond
p.337

Effect of Pressure Pulsation on Post-Etch Photoresist Stripping on Low-k Films in Supercritical CO₂
p.341

Optimization of a SC CO₂ Post-Etch Cleaning for Copper Interconnections
p.345

HomeSolid State PhenomenaSolid State Phenomena Vol. 134Implications of the Selectiveness of Cu Chelators...

Implications of the Selectiveness of Cu Chelators on Cu⁰, Cu(I)O and Cu(II)O Powders

Abstract:

The time and stoichiometric ratio dependence on dissolution of Cu from Cu(I)O and Cu(II)O and metallic Cu was investigated for a series of known Cu chelators. This was monitored by ICP-OES and UV-VIS. A notable difference in the rate of reaction for Cu(I)O vs Cu(II)O was observed and the impact of a copper adduct precipitating from solution discussed as this may present a redeposition issue for Cu surface cleaning. Additionally these chelators were found to selectively favour Cu0 and typically showed higher solution levels of Cu when exposed to the oxides.