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HomeSolid State PhenomenaSolid State Phenomena Vols. 32-33

Solid State Phenomena Vols. 32-33

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.32-33

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Table of Contents

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Paper Title Page

Formation and Properties of Tetranuclear Clusters of Manganese in Silicon

Authors: J. Kreissl, W. Gehlhoff

213

EPR Identification of the Different Charge States of the Iron-Acceptor Pairs in Silicon

Authors: W. Gehlhoff, K. Irmscher

219

Investigation of Deep Levels and Carrier Dynamics in SiC Films

Authors: M. Petrauskas, V. Bikbayev, R. Tomasiunas, Magnus Willander, Qamar-ul Wahab

225

Process-Induced Defects in Silicon Technology

Authors: Bernd O. Kolbesen, M. Dellith, R. Booker, Hans Cerva, F. Gelsdorf, Werner Bergholz

231

Lattice Defects Induced in Si_1-xGe_x Diodes by 1-MeV Electron Irradiation and their Influence on Electrical Characteristics

Authors: H. Ohyama, Jan Vanhellemont, Jef Poortmans, Matty Caymax, Paul Clauws

247

Non-Equilibrium Impurity Diffusion in Silicon and Silicon Carbide

Authors: Nikolai T. Bagraev, E.I. Chaikina, L.E. Klyachkin

253

Dopant Migration Caused by Point Defect Gradients

Authors: P. Pichler, S. List

259

Vacancy Assisted Diffusion of Si in GaAs: Microscopic Theory

Authors: Jaroslaw Dąbrowski, J. Northrup

269

Investigation of Defect Generation and Precipitation in Antimony Implanted Silicon

Authors: D. Krüger, R. Kurps, P. Zaumseil

273

Electric-Dipole Spin Resonance on Extended Defects in Silicon

Authors: Vitaly V. Kveder

279

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