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HomeSolid State PhenomenaSolid State Phenomena Vols. 32-33

Solid State Phenomena Vols. 32-33

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.32-33

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Paper Title Page

Equilibrium Configuration of Misfit Dislocations in Graded Buffers

Authors: G. Span, G. Heigl, Erich Kasper

457

Evolution of Amorphous/Crystalline Interfacial Roughness and End-of-Range Defects during Solid-Phase Epitaxial Regrowth of Ge Implaned Silicon

Authors: Michael Seibt

463

Investigations of 2D Hole Gas in Strained Ge-Ge_1-xSi_x Superlattices

Authors: L.K. Orlov, O.A. Kuznetsov, R.A. Rubtsova, A.L. Chernov, V.I. Vdovin, N.A. Gorodilov, N.G. Kalugin, V.I. Gavrilenko

469

Photoluminescence of 2D-Excitons in Ge Layers of Ge-Ge_1-xSi_x Multiple Quantum Well Structures

Authors: N.G. Kalugin, L.K. Orlov, O.A. Kuznetsov

475

Strained Quaternary Compounds GaInAsP/InP for Infrared Laser (1.5µm)

Authors: L. Goldstein, P. Pagnod-Rossiaux, F. Gaborit, P. Garabedian, M. Magnabal, F. Brillouet, M. Matabon

481

Persistent Decrease of Dark Conductivity due to Illumination in AlGaAs/GaAs Modulation-Doped Heterostructures

Authors: H. Pettersson, Hermann G. Grimmeiss, A.L. Powell, C.C. Button, J.S. Roberts, P.I. Rockett

489

Photoelectrical Interface Processes in Multilayer-Type Heterostructures Based on Silicon, II-VI Compounds and Photosynthetic Pigments

Authors: M. Gherghel

495

Application of Electron Microscopy to Semiconductor Materials Research

Authors: J. Heydenreich

511

X-Ray Analysis of Strained Layer Configurations

Authors: H.-J. Herzog

523

In Situ X-Ray Investigation of Relaxation Processes in Si_1-xGe_x Layers on Silicon Substrate

Authors: P. Zaumseil

535

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