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HomeSolid State PhenomenaSolid State Phenomena Vols. 47-48

Solid State Phenomena Vols. 47-48

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.47-48

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Table of Contents

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Paper Title Page

The Mechanisms and Application of Dislocation Related Radiation for Silicon Based Light Sources

Authors: E.A. Steinman, Vitaly V. Kveder, Hermann G. Grimmeiss

217

Critical Conditions for the Generation of the Misfit Dislocations during the Boron Diffusion in Silicon: Analytical Evaluation

Authors: F. Gaiseanu

223

Infrared Studies of Oxygen Precipitation Related Defects in Silicon after Various Thermal Treatments

Authors: Jan Vanhellemont, G. Kissinger, Paul Clauws, A. Kaniava, M. Libezny, Eugenijus Gaubas, Eddy Simoen, Hans Richter, Cor Claeys

229

Point Defects in Semiconductors - Then and Now

Authors: Sokrates T. Pantelides

237

Oxygen Aggregation Phenomena in Silicon

Authors: R.C. Newman, M.J. Binns, Charalamos A. Londos, S.A. McQuaid, J.H. Tucker

247

New Donors in Heat-Treated Cz-Si, Their Components and Formation Kinetics

Authors: Valentin V. Emtsev, Gagik A. Oganesyan, K. Schmalz

259

Hydrogen Passivation of Double Donors in Silicon

Authors: Yu.V. Martynov, I.S. Zevenbergen, T. Gregorkiewicz, C.A.J. Ammerlaan

267

Phosphorus Diffusion Induced Reconstruction of Defect Structure in Oxygen Precipitated Si

Authors: Eugene B. Yakimov, Isabelle Périchaud, Santo Martinuzzi

275

New Infrared Bands in Neutron-Irradiated Si

Authors: Charalamos A. Londos, G.I. Georgiou, L.G. Fytros, N. Sarlis

281

Iron Group Impurities in Semiconducting Iron Disilicide

Authors: K. Irmscher, W. Gelhoff, Y. Tomm, H. Lange

287

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