Energy Loss of O1s Photoelectrons in Compositional and Structural Transition Layer at and near the SiO2/Si Interface

Abstract:

Article Preview

Info:

Periodical:

Solid State Phenomena (Volumes 65-66)

Edited by:

Marc Heyns, Marc Meuris and Paul Mertens

Pages:

241-244

DOI:

10.4028/www.scientific.net/SSP.65-66.241

Citation:

H. Nohira et al., "Energy Loss of O1s Photoelectrons in Compositional and Structural Transition Layer at and near the SiO2/Si Interface", Solid State Phenomena, Vols. 65-66, pp. 241-244, 1999

Online since:

November 1998

Export:

Price:

$35.00

In order to see related information, you need to Login.