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HomeSolid State PhenomenaSolid State Phenomena Vols. 65-66Energy Loss of O1s Photoelectrons in Compositional...

Energy Loss of O1s Photoelectrons in Compositional and Structural Transition Layer at and near the SiO₂/Si Interface

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Periodical:

Solid State Phenomena (Volumes 65-66)

Pages:

241-244

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.65-66.241

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Online since:

November 1998

Authors:

H. Nohira, Kunimasa Takahashi, Takeshi Hattori

Keywords:

Energy Loss Spectroscopy, O1s Photoelectron, Silicon Oxide (SiO), Transition Layer, X-Ray Photoelectron Spectroscopy (XPS)

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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