Paper Titles

Electrical Evaluation of the Epi/Substrate Interface Quality after Different In-Situ and Ex-Situ Low-Temperature Pre-Epi Cleaning Methods
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Energy Loss of O1s Photoelectrons in Compositional and Structural Transition Layer at and near the SiO₂/Si Interface
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Metal Enhanced Oxidation of Silicon
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Effect of Si Surface Roughness on the Current-Voltage Characteristics of Ultra-Thin Gate Oxides
p.249

Infrared Absorption Studies of Wet Chemical Oxides: Thermal Evolution of Impurities
p.253

X-Ray Photoelectron Study of Gate Oxides and Nitrides
p.257

Evaluation of C₃F₈ as an In-Situ Cleaning Gas for PECVD Tools
p.261

Generation at Point-of-Use of BHF
p.267

Characterization of HF Cleaning of Ion-Implanted Si Surfaces
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HomeSolid State PhenomenaSolid State Phenomena Vols. 65-66Infrared Absorption Studies of Wet Chemical...

Infrared Absorption Studies of Wet Chemical Oxides: Thermal Evolution of Impurities

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Ultra Clean Processing of Silicon Surfaces IV

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Periodical:

Solid State Phenomena (Volumes 65-66)

Pages:

253-256

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.65-66.253

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Online since:

November 1998

Authors:

Y.J. Chabal, M.K. Weldon, A.B. Gurevich, S.B. Christman

Keywords:

Impurity, Infrared Spectroscopy, Oxide Phonons, Silicon Oxidation, Wet Cleaning

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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