Paper Titles

Effect of Si Surface Roughness on the Current-Voltage Characteristics of Ultra-Thin Gate Oxides
p.249

Infrared Absorption Studies of Wet Chemical Oxides: Thermal Evolution of Impurities
p.253

X-Ray Photoelectron Study of Gate Oxides and Nitrides
p.257

Evaluation of C₃F₈ as an In-Situ Cleaning Gas for PECVD Tools
p.261

Generation at Point-of-Use of BHF
p.267

Characterization of HF Cleaning of Ion-Implanted Si Surfaces
p.271

Determination of SC1 Etch Rates at Low Temperatures with Microscope Interferometry
p.275

Impact of Trace Metals in Litho Chemicals
p.279

Post Metal Etch Polymer Removal: An Investigation of Parameters that Influence Corrosion
p.283

HomeSolid State PhenomenaSolid State Phenomena Vols. 65-66Generation at Point-of-Use of BHF

Generation at Point-of-Use of BHF

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Ultra Clean Processing of Silicon Surfaces IV

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Periodical:

Solid State Phenomena (Volumes 65-66)

Pages:

267-270

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.65-66.267

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Online since:

November 1998

Authors:

Steven Verhaverbeke, L.H. Liu

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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