Paper Titles

X-Ray Photoelectron Study of Gate Oxides and Nitrides
p.257

Evaluation of C₃F₈ as an In-Situ Cleaning Gas for PECVD Tools
p.261

Generation at Point-of-Use of BHF
p.267

Characterization of HF Cleaning of Ion-Implanted Si Surfaces
p.271

Determination of SC1 Etch Rates at Low Temperatures with Microscope Interferometry
p.275

Impact of Trace Metals in Litho Chemicals
p.279

Post Metal Etch Polymer Removal: An Investigation of Parameters that Influence Corrosion
p.283

A Process Using Ozonated Water Solutions to Remove Photoresist after Metallization
p.287

The Optimization of the Cleaning to Remove Residual Bonds of Si-C and Si-F after Fluorocarbon Plasma Etch on the Silicon Surface
p.291

HomeSolid State PhenomenaSolid State Phenomena Vols. 65-66Determination of SC1 Etch Rates at Low...

Determination of SC1 Etch Rates at Low Temperatures with Microscope Interferometry

Article Preview

Abstract:

You might also be interested in these eBooks

Ultra Clean Processing of Silicon Surfaces IV

Info:

Periodical:

Solid State Phenomena (Volumes 65-66)

Pages:

275-278

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.65-66.275

Citation:

Cite this paper

Online since:

November 1998

Authors:

W. Storm, H.A. Gerber, G.-F. Hohl, M. Naujok, R. Schmolke

Keywords:

Atomic Force Microscope (AFM), Etch Rate, Interferometry, SC1 Cleaning

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1999 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: