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Energy Loss of O1s Photoelectrons in Compositional and Structural Transition Layer at and near the SiO₂/Si Interface
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Metal Enhanced Oxidation of Silicon
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Effect of Si Surface Roughness on the Current-Voltage Characteristics of Ultra-Thin Gate Oxides
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Infrared Absorption Studies of Wet Chemical Oxides: Thermal Evolution of Impurities
p.253

X-Ray Photoelectron Study of Gate Oxides and Nitrides
p.257

Evaluation of C₃F₈ as an In-Situ Cleaning Gas for PECVD Tools
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Generation at Point-of-Use of BHF
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Characterization of HF Cleaning of Ion-Implanted Si Surfaces
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Determination of SC1 Etch Rates at Low Temperatures with Microscope Interferometry
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HomeSolid State PhenomenaSolid State Phenomena Vols. 65-66X-Ray Photoelectron Study of Gate Oxides and...

X-Ray Photoelectron Study of Gate Oxides and Nitrides

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Ultra Clean Processing of Silicon Surfaces IV

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Periodical:

Solid State Phenomena (Volumes 65-66)

Pages:

257-260

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.65-66.257

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Online since:

November 1998

Authors:

R.L. Opila, Jane P. Chang, M. Du, J. Bevk, Yuanqing Ma, M. Weldon, Y. Chabal, A.B. Gurevich

Keywords:

Rapid Thermal Oxidation, X-Ray Photoelectron Spectroscopy (XPS)

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© 1999 Trans Tech Publications Ltd. All Rights Reserved

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