X-Ray Photoelectron Study of Gate Oxides and Nitrides

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Periodical:

Solid State Phenomena (Volumes 65-66)

Edited by:

Marc Heyns, Marc Meuris and Paul Mertens

Pages:

257-260

DOI:

10.4028/www.scientific.net/SSP.65-66.257

Citation:

R.L. Opila et al., "X-Ray Photoelectron Study of Gate Oxides and Nitrides", Solid State Phenomena, Vols. 65-66, pp. 257-260, 1999

Online since:

November 1998

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Price:

$35.00

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