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Structural and Electrical Characterization of Ultra-Thin SiO₂ Films Prepared by Catalytic Oxidation Method
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Effect of Chemical Oxides Formed During Pre-Gate Oxide Cleaning on the Properties of Sub 20Ǻ Thick Ultra-Thin Stack Gate Dielectrics
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Controlling Silicon Surface Roughness During Photochemical Cleaning
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HomeSolid State PhenomenaSolid State Phenomena Vols. 76-77Characterization of DI Water/O3 Oxidation of Si...

Characterization of DI Water/O₃ Oxidation of Si (100) and Si (111) Surfaces by OCP Measurements

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Periodical:

Solid State Phenomena (Volumes 76-77)

Pages:

161-164

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.76-77.161

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Online since:

January 2001

Authors:

Harald Okorn-Schmidt, C. D'Emic, R. Murphy

Keywords:

OCP, Ozone, Roughness

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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