Paper Titles

The Origins of Fluorine in Dry Ultrathin Silicon Oxides
p.153

Structural and Electrical Characterization of Ultra-Thin SiO₂ Films Prepared by Catalytic Oxidation Method
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Characterization of DI Water/O₃ Oxidation of Si (100) and Si (111) Surfaces by OCP Measurements
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Effect of Chemical Oxides Formed During Pre-Gate Oxide Cleaning on the Properties of Sub 20Ǻ Thick Ultra-Thin Stack Gate Dielectrics
p.165

Controlling Silicon Surface Roughness During Photochemical Cleaning
p.169

Influence of Cleaning on the Quality of the Bonding Interface in Direct Bonded Silicon Wafers
p.173

Characterization and Production Metrology of Thin Transistor Gate Dielectric Films
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Electronic Properties of Wet-Chemically Prepared Oxide Layers
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A Probe of Chemical Oxide Growth Conditions
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HomeSolid State PhenomenaSolid State Phenomena Vols. 76-77Controlling Silicon Surface Roughness During...

Controlling Silicon Surface Roughness During Photochemical Cleaning

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Abstract:

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Ultra Clean Processing of Silicon Surfaces V

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Periodical:

Solid State Phenomena (Volumes 76-77)

Pages:

169-172

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.76-77.169

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Online since:

January 2001

Authors:

Jeffery W. Butterbaugh, Brent Schwab, Thomas Sorsch, Martin L. Green

Keywords:

Dry Cleaning, Silicon Roughness, UV/Chlorine

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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