Paper Titles

Effect of Chemical Oxides Formed During Pre-Gate Oxide Cleaning on the Properties of Sub 20Ǻ Thick Ultra-Thin Stack Gate Dielectrics
p.165

Controlling Silicon Surface Roughness During Photochemical Cleaning
p.169

Influence of Cleaning on the Quality of the Bonding Interface in Direct Bonded Silicon Wafers
p.173

Characterization and Production Metrology of Thin Transistor Gate Dielectric Films
p.177

Electronic Properties of Wet-Chemically Prepared Oxide Layers
p.181

A Probe of Chemical Oxide Growth Conditions
p.185

Fundamentals of Wafer Rinse Processes and the Interactions with Water Conservation and Recycling in Semiconductor Manufacturing Plants
p.189

A Novel Rinsing Tank Concept to Save DI Water Using an Internal Recirculation Flow: 'Circle Stream Rinser'
p.191

Rinsing and Drying Effects on Heterogeneous Substrates
p.195

HomeSolid State PhenomenaSolid State Phenomena Vols. 76-77Electronic Properties of Wet-Chemically Prepared...

Electronic Properties of Wet-Chemically Prepared Oxide Layers

Article Preview

Abstract:

You might also be interested in these eBooks

Ultra Clean Processing of Silicon Surfaces V

Info:

Periodical:

Solid State Phenomena (Volumes 76-77)

Pages:

181-184

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.76-77.181

Citation:

Cite this paper

Online since:

January 2001

Authors:

Heike Angermann, W. Henrion, M. Rebien

Keywords:

Interface States (or Traps), Spectroscopic Ellipsometry (SE), Wet Chemical Oxides

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2001 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: