Effect of Chemical Oxides Formed During Pre-Gate Oxide Cleaning on the Properties of Sub 20Ǻ Thick Ultra-Thin Stack Gate Dielectrics

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Periodical:

Solid State Phenomena (Volumes 76-77)

Edited by:

Marc Heyns, Marc Meuris and Paul Mertens

Pages:

165-168

DOI:

10.4028/www.scientific.net/SSP.76-77.165

Citation:

J. S. Jeon and B. Ogle, "Effect of Chemical Oxides Formed During Pre-Gate Oxide Cleaning on the Properties of Sub 20Ǻ Thick Ultra-Thin Stack Gate Dielectrics", Solid State Phenomena, Vols. 76-77, pp. 165-168, 2001

Online since:

January 2001

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$35.00

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