Paper Titles

Influence of Boron and Fluorine Incorporation on the Network Structure of Ultrathin SiO₂
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The Origins of Fluorine in Dry Ultrathin Silicon Oxides
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Structural and Electrical Characterization of Ultra-Thin SiO₂ Films Prepared by Catalytic Oxidation Method
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Characterization of DI Water/O₃ Oxidation of Si (100) and Si (111) Surfaces by OCP Measurements
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Effect of Chemical Oxides Formed During Pre-Gate Oxide Cleaning on the Properties of Sub 20Ǻ Thick Ultra-Thin Stack Gate Dielectrics
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Controlling Silicon Surface Roughness During Photochemical Cleaning
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Influence of Cleaning on the Quality of the Bonding Interface in Direct Bonded Silicon Wafers
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Characterization and Production Metrology of Thin Transistor Gate Dielectric Films
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Electronic Properties of Wet-Chemically Prepared Oxide Layers
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HomeSolid State PhenomenaSolid State Phenomena Vols. 76-77Effect of Chemical Oxides Formed During Pre-Gate...

Effect of Chemical Oxides Formed During Pre-Gate Oxide Cleaning on the Properties of Sub 20Ǻ Thick Ultra-Thin Stack Gate Dielectrics

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Ultra Clean Processing of Silicon Surfaces V

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Periodical:

Solid State Phenomena (Volumes 76-77)

Pages:

165-168

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.76-77.165

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Online since:

January 2001

Authors:

Joong S. Jeon, Bob Ogle

Keywords:

Chemical Oxide, CV, Leakage Current, RTCVD, Stack Gate Dielectrics

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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