Paper Titles

Gap States at the Interface of Ultra-Thin Oxide and Organic Films on Si(100)
p.131

Modification of Low-K SiCOH Film Porosity by a HF Solution
p.135

Layer-By-Layer Oxidation of Silicon
p.139

The Evolution of Chemical Oxides Into Ultrathin Oxides: A Spectroscopic Characterization
p.145

Influence of Boron and Fluorine Incorporation on the Network Structure of Ultrathin SiO₂
p.149

The Origins of Fluorine in Dry Ultrathin Silicon Oxides
p.153

Structural and Electrical Characterization of Ultra-Thin SiO₂ Films Prepared by Catalytic Oxidation Method
p.157

Characterization of DI Water/O₃ Oxidation of Si (100) and Si (111) Surfaces by OCP Measurements
p.161

Effect of Chemical Oxides Formed During Pre-Gate Oxide Cleaning on the Properties of Sub 20Ǻ Thick Ultra-Thin Stack Gate Dielectrics
p.165

HomeSolid State PhenomenaSolid State Phenomena Vols. 76-77Influence of Boron and Fluorine Incorporation on...

Influence of Boron and Fluorine Incorporation on the Network Structure of Ultrathin SiO₂

Article Preview

Abstract:

You might also be interested in these eBooks

Ultra Clean Processing of Silicon Surfaces V

Info:

Periodical:

Solid State Phenomena (Volumes 76-77)

Pages:

149-152

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.76-77.149

Citation:

Cite this paper

Online since:

January 2001

Authors:

Seiichi Miyazaki, Kazuhiro Morino, Masataka Hirose

Keywords:

Impurity Pileup, SiO₂/SiC Interface, Structural Relaxation

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2001 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: