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HomeSolid State PhenomenaSolid State Phenomena Vols. 76-77Contamination and Cleaning of Oxide Areas Exposed...

Contamination and Cleaning of Oxide Areas Exposed During Copper CMP in Hydroxylamine Based Slurries

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Abstract:

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Periodical:

Solid State Phenomena (Volumes 76-77)

Pages:

295-298

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.76-77.295

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Online since:

January 2001

Authors:

C. Shang, Wayne Huang, Srini Raghavan, Zhe Fei Chen, Robert Small, M. Peterson, Jeong Sic Jeon

Keywords:

Chemical-Mechanical Planarization (CMP), Contamination, Copper (Cu), Hydroxylamine

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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